BYS11-90 90V Schottky Barrier Rectifier 1.5A FEATURES D D D D D High efficiency Low power losses Very low switching losses Low reverse current High surge capability MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage= Repetitive peak reverse voltage Peak forward surge current Average forward current Junction and storage temperature range Test Conditions Type tp=10ms, half sinewave Symbol VR= VRRM IFSM IFAV Value Unit 90 V 30 1.5 A A Tj=Tstg –55...+150 °C Maximum Thermal Resistance Tj = 25_C Parameter Junction lead Test Conditions TL=constant mounted on epoxy–glass hard tissue Junction ambient mounted on epoxy–glass hard tissue, 50mm2 35mm Cu mounted on Al–oxid–ceramic (Al2O3), 50mm2 35mm Cu Symbol RthJL RthJA Value 25 150 125 100 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current Test Conditions Type IF=1A VR=VRRM VR=VRRM, Tj=100°C E-mail: [email protected] Symbol VF IR 1 of 2 Min Type Max 750 100 1 Unit mV mA mA Web Site: www.taychipst.com BYS11-90 90V Schottky Barrier Rectifier PR – Maximum Reverse Power Dissipation ( W ) RATINGS AND CHARACTERISTIC CURVES BYS11-90 I FAV– Average Forward Current ( A ) 2.0 RthJA=25K/W 1.6 1.2 RthJA=100K/W 0.8 0.4 2.0 0 40 80 120 160 VR = 0 V, Half Sinewave 1.6 RthJA=25K/W 1.2 100K/W 0.8 125K/W 0.4 VR = VR RM 0 150K/W 0 200 0 Tj – Junction Temperature ( °C ) 95 9715 40 80 120 160 200 Tamb – Ambient Temperature ( °C ) 95 9718 Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature Figure 4. Max. Average Forward Current vs. Ambient Temperature 1000 10.000 VR = VR RM – Forward Current ( A) Tj = 150°C 100 10 F 1 1.000 0.100 Tj = 25°C 0.010 I IR – Reverse Current ( mA ) 1.5A 0.001 0.1 0 40 80 120 160 200 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Tj – Junction Temperature ( °C ) 95 9716 VF – Forward Voltage ( V ) 16469 Figure 2. Max. Reverse Current vs. Junction Temperature Figure 5. Forward Current vs. Forward Voltage I FAV– Average Forward Current ( A ) 180 2.0 f=1MHz 160 CD – Diode Capacitance ( pF ) VR = VR RM, Half Sinewave, RthJA=25K/W 1.6 1.2 0.8 0.4 140 120 100 80 60 40 20 0 0.1 0 0 95 9717 40 80 120 160 200 Tamb – Ambient Temperature ( °C ) 16470 Figure 3. Max. Average Forward Current vs. Ambient Temperature E-mail: [email protected] 1.0 10.0 100.0 VR – Reverse Voltage ( V ) Figure 6. Diode Capacitance vs. Reverse Voltage 2 of 2 Web Site: www.taychipst.com