BYG50D THRU BYG50M Controlled avalanche rectifiers 200V-1000V 0.7A-2.1A FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • UL 94V-O classified plastic package • Shipped in 12 mm embossed tape. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR PARAMETER CONDITIONS UNIT BYG50D − 200 V BYG50G − 400 V BYG50J − 600 V BYG50K − 800 V BYG50M − 1000 V − 200 V continuous reverse voltage BYG50G − 400 V BYG50J − 600 V BYG50K − 800 V − 1000 BYG50M IFSM MAX. repetitive peak reverse voltage BYG50D IF(AV) MIN. average forward current non-repetitive peak forward current E-mail: [email protected] V averaged over any 20 ms period; Ttp = 100 °C; see Fig.2 − 2.1 A averaged over any 20 ms period; Al2O3 PCB mounting (see Fig.7); Tamb = 60 °C; see Fig.3 − 1.0 A averaged over any 20 ms period; epoxy PCB mounting (see Fig.7); Tamb = 60 °C; see Fig.3 − 0.7 A t = 10 ms half sinewave; Tj = Tj max prior to surge; VR = VRRMmax − 1 of 3 30 A Web Site: www.taychipst.com BYG50D THRU BYG50M 200V-1000V Controlled avalanche rectifiers SYMBOL MIN. MAX. BYG50D to J − 10 mJ BYG50K and M − 7 mJ Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C TYP. MAX. ERSM PARAMETER CONDITIONS non-repetitive peak reverse avalanche energy L = 120 mH; Tj = Tj max prior to surge; inductive load switched off 0.7A-2.1A see Fig.4 UNIT ELECTRICAL CHARACTERISTICS SYMBOL VF V(BR)R PARAMETER CONDITIONS forward voltage reverse avalanche breakdown voltage MIN. IF = 1 A; Tj = Tj max; see Fig.5 − − 0.85 V IF = 1 A; see Fig.5 − − 1.00 V IR = 0.1 mA BYG50D 300 − − V BYG50G 500 − − V BYG50J 700 − − V BYG50K 900 − − V − V 1100 − VR = VRRMmax; see Fig.6 − − 1 µA VR = VRRMmax; Tj = 165 °C; see Fig.6 − − 100 µA when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.8 − 2 BYG50M IR trr UNIT reverse current reverse recovery time − µs THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient CONDITIONS VALUE UNIT 25 K/W note 1 100 K/W note 2 150 K/W Notes 1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig.7. 2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.7. For more information please refer to the “General Part of associated Handbook”. E-mail: [email protected] 2 of 3 Web Site: www.taychipst.com BYG50D THRU BYG50M 200V-1000V Controlled avalanche rectifiers RATINGS AND CHARACTERISTIC CURVES 0.7A-2.1A BYG50D THRU BYG50M 2.0 IF(AV) 4 handbook, halfpage handbook, halfpage IF(AV) (A) (A) 1.6 3 1.2 2 0.8 1 0.4 0 0 0 40 80 160 200 Ttp (°C) 120 0 Fig.2 Fig.1 Maximum permissible average forward current as a function of tie-point temperature 40 80 120 160 200 Tamb (°C) Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). 10 200 Tj (°C) IF handbook, halfpage (A) 8 160 handbook, 6 halfpage 120 4 80 D G J K M 2 40 0 0 0 400 800 VR (V) 0 1200 0.4 0.8 1.2 1.6 2.0 VF (V) Fig. 4 Forward current as a function of forward voltage; maximum values. Fig.3 Maximum permissible junction temperature as a function of reverse voltage. 3 10halfpage handbook, IR (µA) 10 2 10 1 0 40 80 120 160 200 Tj (oC) Fig.5 Reverse current as a function of junction . temperature; maximum values. E-mail: [email protected] 3 of 3 Web Site: www.taychipst.com