TAYCHIPST BYW98-200

BYW98-200
200V
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
3.0A
FEATURES
VERY LOW CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD AND REVERSE RECOVERY
TIMES
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ABSOLUTE RATINGS (limiting values)
Symbol
.
Parameter
VRRM
Repetitive peak reverse voltage
IFRM
Repetitive peak forward current *
IF (AV)
Average forward current*
IFSM
Surge non repetitive forward current
Tstg
Storage temperature range
Value
Unit
200
V
110
A
3
A
70
A
- 65 to + 150
°C
tp=5 µs
F=1KHz
Ta = 75°C
δ = 0.5
tp = 10ms
Sinusoidal
Tj
Maximum operating junction temperature
150
°C
TL
Maximum lead temperature for soldering during 10s at
4mm from case
230
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
IR *
VF **
Parameter
Test Conditions
Min.
Reverse leakage
current
Tj = 25°C
Forward voltage drop
Tj = 25°C
IF = 9A
Tj = 100°C
IF = 3A
Typ.
VR = VRRM
Tj = 100°C
Max.
Unit
10
µA
0.5
mA
1.2
V
0.78
0.85
Typ.
Max.
Unit
35
ns
RECOVERY CHARACTERISTICS
Symbol
Test Conditions
Min.
trr
Tj = 25°C
VR = 30V
IF = 1A
dIF/dt = - 50A/µs
Qrr
Tj = 25°C
VR ≤ 30V
IF = 3A
dIF/dt = - 20A/µs
15
nC
Tj = 25°C
IF = 3A
Measured at 1.1 x VF max
dIF/dt = - 50A/µs
20
ns
Tj = 25°C
dIF/dt = - 50A/µs
5
V
tfr
VFP
IF = 3A
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BYW98-200
200V
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
RATINGS AND CHARACTERISTIC CURVES
Fig. 1: Average forward power dissipation versus
average forward current.
3.0A
BYW98-200
Fig. 2: Average forward current versus ambient
temperature (δ=0.5).
IF(av)(A)
PF(av)(W)
3.5
3.5
δ = 0.05
3.0
δ = 0.2
δ = 0.1
δ=1
δ = 0.5
Rth(j-a)=Rth(j-l)
3.0
2.5
2.5
2.0
2.0
1.5
1.5
Rth(j-a)=75°C/W
1.0
1.0
T
0.5
δ=tp/T
IF(av) (A)
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T
0.5
tp
3.5
Fig. 3: Thermal resistance versus lead length.
δ=tp/T
0.0
0
Tamb(°C)
tp
25
50
75
100
125
150
Fig. 4: Variation of thermal impedance junction to
ambient versus pulse duration (recommended pad
Rth(°C/W)
Zth(j-a)/Rth(j-a)
90
1.00
80
δ = 0.5
Rth(j-a)
70
δ = 0.2
60
50
0.10
40
δ = 0.1
Rth(j-l)
30
T
20
Single pulse
10
0
tp(s)
Lleads(mm)
5
10
15
20
25
Fig. 5: Forward voltage drop versus forward
current (maximum values).
70.00
0.01
1E-1
1E+0
δ=tp/T
1E+1
tp
1E+2
5E+2
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
IFM(A)
C(pF)
100
F=1MHz
Tj=25°C
Tj=100°C
(Typical values)
10.00
50
Tj=25°C
Tj=100°C
1.00
20
VFM(V)
0.10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Fig. 7: Reverse recovery time versus dIF/dt.
VR(V)
10
10
100
trr(ns)
2.5
IF=3A
90% confidence
Tj=100°C
IRM(A)
IF=3A
90% confidence
Tj=100°C
2.0
Tj=100°C
Tj=100°C
1.5
60
40
200
Fig. 8: Peak reverse recovery current versus
dIF/dt.
100
80
1
1.0
Tj=25°C
Tj=25°C
0.5
20
dIF/dt(A/µs)
0
1
10
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100
0.0
dIF/dt(A/µs)
1
2 of 2
10
100
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