BYW98-200 200V HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES 3.0A FEATURES VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ABSOLUTE RATINGS (limiting values) Symbol . Parameter VRRM Repetitive peak reverse voltage IFRM Repetitive peak forward current * IF (AV) Average forward current* IFSM Surge non repetitive forward current Tstg Storage temperature range Value Unit 200 V 110 A 3 A 70 A - 65 to + 150 °C tp=5 µs F=1KHz Ta = 75°C δ = 0.5 tp = 10ms Sinusoidal Tj Maximum operating junction temperature 150 °C TL Maximum lead temperature for soldering during 10s at 4mm from case 230 °C STATIC ELECTRICAL CHARACTERISTICS Symbol IR * VF ** Parameter Test Conditions Min. Reverse leakage current Tj = 25°C Forward voltage drop Tj = 25°C IF = 9A Tj = 100°C IF = 3A Typ. VR = VRRM Tj = 100°C Max. Unit 10 µA 0.5 mA 1.2 V 0.78 0.85 Typ. Max. Unit 35 ns RECOVERY CHARACTERISTICS Symbol Test Conditions Min. trr Tj = 25°C VR = 30V IF = 1A dIF/dt = - 50A/µs Qrr Tj = 25°C VR ≤ 30V IF = 3A dIF/dt = - 20A/µs 15 nC Tj = 25°C IF = 3A Measured at 1.1 x VF max dIF/dt = - 50A/µs 20 ns Tj = 25°C dIF/dt = - 50A/µs 5 V tfr VFP IF = 3A E-mail: [email protected] 1 of 2 Web Site: www.taychipst.com BYW98-200 200V HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES RATINGS AND CHARACTERISTIC CURVES Fig. 1: Average forward power dissipation versus average forward current. 3.0A BYW98-200 Fig. 2: Average forward current versus ambient temperature (δ=0.5). IF(av)(A) PF(av)(W) 3.5 3.5 δ = 0.05 3.0 δ = 0.2 δ = 0.1 δ=1 δ = 0.5 Rth(j-a)=Rth(j-l) 3.0 2.5 2.5 2.0 2.0 1.5 1.5 Rth(j-a)=75°C/W 1.0 1.0 T 0.5 δ=tp/T IF(av) (A) 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 T 0.5 tp 3.5 Fig. 3: Thermal resistance versus lead length. δ=tp/T 0.0 0 Tamb(°C) tp 25 50 75 100 125 150 Fig. 4: Variation of thermal impedance junction to ambient versus pulse duration (recommended pad Rth(°C/W) Zth(j-a)/Rth(j-a) 90 1.00 80 δ = 0.5 Rth(j-a) 70 δ = 0.2 60 50 0.10 40 δ = 0.1 Rth(j-l) 30 T 20 Single pulse 10 0 tp(s) Lleads(mm) 5 10 15 20 25 Fig. 5: Forward voltage drop versus forward current (maximum values). 70.00 0.01 1E-1 1E+0 δ=tp/T 1E+1 tp 1E+2 5E+2 Fig. 6: Junction capacitance versus reverse voltage applied (typical values). IFM(A) C(pF) 100 F=1MHz Tj=25°C Tj=100°C (Typical values) 10.00 50 Tj=25°C Tj=100°C 1.00 20 VFM(V) 0.10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Fig. 7: Reverse recovery time versus dIF/dt. VR(V) 10 10 100 trr(ns) 2.5 IF=3A 90% confidence Tj=100°C IRM(A) IF=3A 90% confidence Tj=100°C 2.0 Tj=100°C Tj=100°C 1.5 60 40 200 Fig. 8: Peak reverse recovery current versus dIF/dt. 100 80 1 1.0 Tj=25°C Tj=25°C 0.5 20 dIF/dt(A/µs) 0 1 10 E-mail: [email protected] 100 0.0 dIF/dt(A/µs) 1 2 of 2 10 100 Web Site: www.taychipst.com