STMICROELECTRONICS STTH1R04RL

STTH1R04
Ultrafast recovery diode
Features
■
Negligible switching losses
■
Low forward and reverse recovery times
■
High junction temperature
A
K
DO-41
DO-15
STTH1R04
STTH1R04Q
Band indicates cathode side.
Description
The STTH1R04 series uses ST's new 400 V
planar Pt doping technology. The STTH1R04 is
specially suited for switching mode base drive and
transistor circuits.
Packaged in axial and surface mount packages,
this device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
protection.
May 2008
SMA
STTH1R04A
Table 1.
Device summary
IF(AV)
Rev 1
SMB
STTH1R04U
1A
VRRM
400 V
Tj (max)
175 °C
VF (typ)
0.9 V
trr (typ)
14 ns
1/10
www.st.com
Characteristics
1
STTH1R04
Characteristics
Table 2.
Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
400
V
1.0
A
30
A
-65 to +175
°C
175
°C
Repetitive peak reverse voltage
VRRM
Average forward current, δ = 0.5
IF(AV)
IFSM
Surge non repetitive forward current
Tstg
Storage temperature range
DO-41
Tlead = 100 °C
DO-15
Tlead = 105 °C
SMA
Tlead = 125 °C
SMB
Tlead = 140 °C
tp = 10 ms Sinusoidal
Maximum operating junction temperature(1)
Tj
1. On infinite heatsink with 10 mm lead length
Table 3.
Thermal parameters
Symbol
Rth(j-l)
Parameter
Junction to lead
Value
Lead length = 10 mm
on infinite heatsink
DO-41
55
DO-15
50
SMA
35
SMB
25
Unit
°C/W
Rth(j-l)
Table 4.
Symbol
IR(1)
Junction to lead
Static electrical characteristics
Parameter
Reverse leakage current
Test conditions
Tj = 25 °C
Tj = 125 °C
Min
Typ
Forward voltage drop
Tj = 100 °C
µA
5
50
1.5
IF = 1.0 A
Tj = 150 °C
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation:
P = 0.9 x IF(AV) + 0.250 x IF2(RMS)
2/10
Unit
5
VR = VRRM
Tj = 25 °C
VF(2)
Max
1.0
1.25
0.9
1.15
V
STTH1R04
Characteristics
Table 5.
Dynamic characteristics (Tj = 25 °C unless otherwise stated)
Symbol
trr
tfr
VFP
Min
Typ
Max
IF = 1 A, dIF/dt = -50 A/µs,
VR = 30 V, Tj = 25 °C
Reverse recovery time
IRM
Unit
30
ns
IF = 1 A, dIF/dt = -100 A/µs,
VR = 30 V, Tj = 25 °C
14
20
Reverse recovery current
IF = 1 A, dIF/dt = -200 A/µs,
VR = 320 V, Tj = 125 °C
2.5
3.5
A
Forward recovery time
IF = 1 A
dIF/dt = 100 A/µs
VFR = 1.1 x VFmax, Tj = 25 °C
50
ns
Forward recovery voltage
IF = 1 A
Figure 1.
1.6
Test conditions
Parameter
Conduction losses versus
average forward current
dIF/dt = 100 A/µs
Figure 2.
P(W )
δ=0.05
1.4
δ=0.1
δ=0.2
δ=1
V
Forward voltage drop versus
forward current
IFM(A)
50
δ=0.5
3.5
45
40
1.2
TJ=150°C
(Maximum values)
35
1.0
30
0.8
25
TJ=150°C
(Typical values)
20
0.6
15
0.4
T
TJ=25°C
=25°C
(Maximum values)
10
0.2
δ=tp/T
I F(AV) (A)
5
tp
0.0
VFM(V)
0
0.0
0.2
Figure 3.
0.4
0.6
0.8
1.0
1.2
Relative variation of thermal
impedance junction to lead
versus pulse duration (DO-41)
0.0
Figure 4.
Zth(j-l)/Rth(j-l)
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
Relative variation of thermal
impedance junction to lead
versus pulse duration (DO-15)
Zth(j-l)/Rth(j-l)
1.0
1.0
DO-41
Lleads=10mm
0.9
DO-15
Lleads=10mm
0.9
0.8
0.8
0.7
0.7
0.6
0.6
0.5
0.5
0.4
0.4
0.3
0.3
0.2
0.2
0.1
0.4
Single pulse
0.1
tP(s)
1.E-01
1.E+00
1.E+01
tP(s)
0.0
0.0
1.E-02
Single pulse
1.E+02
1.E+03
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
3/10
Characteristics
Figure 5.
STTH1R04
Relative variation of thermal
impedance junction to lead
versus pulse duration, SMA
Figure 6.
Zth(j-l)/Rth(j-l)
1.0
1.0
SMA
Scu=1cm²
0.9
Zth(j-l)/Rth(j-l)
SMB
Scu=1cm²
0.9
0.8
0.8
0.7
0.7
0.6
0.6
0.5
0.5
0.4
0.4
0.3
0.3
Relative variation of thermal
impedance junction to lead
versus pulse duration, SMB
0.2
0.2
0.1
tP(s)
Figure 7.
1.E-01
tP(s)
0.0
0.0
1.E-02
Single pulse
0.1
Single pulse
1.E+00
1.E+01
1.E+02
1.E+03
Junction capacitance versus
reverse voltage applied (typical
values)
C(pF)
1.E-03
Figure 8.
F=1MHz
VOSC=30mVRMS
Tj=25°C
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Reverse recovery charges versus
dIF/dt (typical values)
QRR(nC)
40
100
1.E-02
IF= 1 A
VR=320 V
36
32
28
24
10
Tj=125 °C
20
16
12
8
1
Figure 9.
10
100
1000
Reverse recovery time versus
dIF/dt (typical values)
10
100
1000
Figure 10. Peak reverse recovery current
versus dIF/dt (typical values)
tRR(ns)
5.0
IF= 1 A
VR=320 V
IRM(A)
IF= 1 A
VR=320 V
4.5
4.0
3.5
3.0
Tj=125 °C
2.5
Tj=125 °C
2.0
1.5
Tj=25 °C
1.0
Tj=25 °C
0.5
dIF/dt(A/µs)
10
4/10
dIF/dt(A/µs)
0
1
70
65
60
55
50
45
40
35
30
25
20
15
10
5
0
Tj=25 °C
4
VR(V)
100
dIF/dt(A/µs)
0.0
1000
10
100
1000
STTH1R04
Characteristics
Figure 11. Relative variations of dynamic
parameters versus junction
temperature
Figure 12. Transient peak forward voltage
versus dIF/dt (typical values)
VFp(V)
QRR
Q
QRR
[Tj]j] // Q
[Tj=125°C]
RR;; IIRM
RM [T
RR;; IIRM
RM [T
j =125°C]
30
1.4
IF=1 A
Tj=125 °C
IF= 1 A
VR=320 V
1.2
25
1.0
20
IRM
0.8
15
QRR
0.6
10
0.4
5
0.2
dIF/dt(A/µs)
T j(°C)
0
0.0
25
50
75
100
125
150
Figure 13. Forward recovery time versus
dIF/dt (typical values)
120
100
150
200
250
300
350
400
450
500
Rth(°C/W)
DO-41
IF=1 A
Tj=125 °C
50
50
Figure 14. Thermal resistance versus
lead length (DO-41)
tFR(ns)
55
0
Rth(j-a)
100
45
40
80
35
30
60
25
Rth(j-l)
20
40
15
10
20
5
Lleads(mm)
dIF/dt(A/µs)
0
0
0
50
100
150
200
250
300
350
400
450
5
500
10
15
20
25
Figure 15. Thermal resistance junction to
Figure 16. Thermal resistance junction to
ambient versus lead length, DO-15
ambient versus copper surface
under each lead, SMA, SMB, (epoxy
FR4, copper thickness = 35 µm)
Rth(j-a) (°C/W)
Rth(j-a) (°C/W)
120
120
DO-15
100
100
80
80
60
60
40
40
SMA
SMB
20
20
Lleads(mm)
SCU(cm²)
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5/10
Package information
2
STTH1R04
Package information
●
Epoxy meets UL94, V0
●
Cooling method: by conduction (C)
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at www.st.com.
Table 6.
DO-41 (plastic) dimensions
Dimensions
Ref.
Table 7.
C
A
Inches
Min.
Max.
Min.
Max.
A
4.1
5.20
0.160
0.205
B
2
2.71
0.080
0.107
C
25.4
D
0.712
ØD ØB
C
Millimeters
1
0.863
0.028
0.034
DO-15 dimensions
Dimensions
C
C
A
D
B
6/10
Ref.
Millimeters
Inches
Min.
Max.
Min.
Max.
A
6.05
6.75
0.238
0.266
B
2.95
3.53
0.116
0.139
C
26
31
1.024
1.220
D
0.71
0.88
0.028
0.035
STTH1R04
Package information
Table 8.
SMA dimensions
Dimensions
Ref.
Millimeters
Inches
E1
D
E
A1
A2
C
L
Min.
Max.
Min.
Max.
A1
1.90
2.45
0.075
0.094
A2
0.05
0.20
0.002
0.008
b
1.25
1.65
0.049
0.065
c
0.15
0.40
0.006
0.016
D
2.25
2.90
0.089
0.114
E
4.80
5.35
0.189
0.211
E1
3.95
4.60
0.156
0.181
L
0.75
1.50
0.030
0.059
b
Figure 17. Footprint, dimensions in mm (inches)
1.4
2.63
1.4
(0.055)
(0.103)
(0.055)
1.64
(0.064)
5.43
(0.214)
7/10
Package information
Table 9.
STTH1R04
SMB dimensions
Dimensions
Ref.
Millimeters
Inches
E1
D
E
A1
A2
C
L
b
Min.
Max.
Min.
Max.
A1
1.90
2.45
0.075
0.096
A2
0.05
0.20
0.002
0.008
b
1.95
2.20
0.077
0.087
c
0.15
0.40
0.006
0.016
D
3.30
3.95
0.130
0.156
E
5.10
5.60
0.201
0.220
E1
4.05
4.60
0.159
0.181
L
0.75
1.50
0.030
0.059
Figure 18. Footprint, dimensions in mm (inches)
1.62
2.60
(0.064) (0.102)
1.62
(0.064)
2.18
(0.086)
5.84
(0.300)
8/10
STTH1R04
3
Ordering information
Ordering information
Table 10.
4
Ordering information
Order code
Marking
Package
Weight
Base qty
Delivery mode
STTH1R04
STTH1R04
DO-41
0.34 g
1000
Ammopack
STTH1R04RL
STTH1R04
DO-41
0.34 g
5000
Tape and reel
STTH1R04Q
STTH1R04Q
DO-15
0.4 g
1000
Ammopack
STTH1R04QRL
STTH1R04Q
DO-15
0.4 g
6000
Tape and reel
STTH1R04A
HR4
SMA
0.068 g
5000
Tape and reel
STTH1R04U
BR4
SMB
0.12 g
2500
Tape and reel
Revision history
Table 11.
Document revision history
Date
Revision
30-May-2008
1
Description of changes
First issue
9/10
STTH1R04
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10/10