BYW98-200 High Efficiency Fast Recovery Rectifier Diodes DO-201AD MAIN PRODUCT CHARACTERISTICS IF(AV) 3A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 35 ns FEATURES AND BENEFITS VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES Dimensions in inches and (millimeters) DESCRIPTION Low voltage drop and rectifier suited for switching mode base drive and transistor circuits. ABSOLUTE RATINGS (limiting values) Symbol Parameter VRRM Repetitive peak reverse voltage IFRM Repetitive peak forward current * IF (AV) Average forward current* IFSM Surge non repetitive forward current Tstg Storage temperature range tp=5 µs F=1KHz Ta = 75°C δ = 0.5 tp = 10ms Sinusoidal Value Unit 200 V 110 A 3 A 70 A - 65 to + 150 °C Tj Maximum operating junction temperature 150 °C TL Maximum lead temperature for soldering during 10s at 4mm from case 230 °C * On infinite heatsink with 10mm lead length. http://www.luguang.cn mail:[email protected] BYW98-200 High Efficiency Fast Recovery Rectifier Diodes THERMAL RESISTANCE Symbol Rth (j-a) Parameter Junction-ambient * Value Unit 25 °C/W * On infinite heatsink with 10mm lead length. STATIC ELECTRICAL CHARACTERISTICS Symbol IR * VF ** Parameter Test Conditions Min. Reverse leakage current Tj = 25°C Forward voltage drop Tj = 25°C IF = 9A Tj = 100°C IF = 3A Typ. VR = VRRM Tj = 100°C Max. Unit 10 µA 0.5 mA 1.2 V 0.78 0.85 Typ. Max. Unit 35 ns Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equations: 2 P = 0.75 x IF(AV) + 0.04 IF (RMS) RECOVERY CHARACTERISTICS Symbol Test Conditions Min. trr Tj = 25°C VR = 30V IF = 1A dIF/dt = - 50A/µs Qrr Tj = 25°C VR ≤ 30V IF = 3A dIF/dt = - 20A/µs 15 nC tfr Tj = 25°C IF = 3A Measured at 1.1 x VF max dIF/dt = - 50A/µs 20 ns Tj = 25°C dIF/dt = - 50A/µs 5 V VFP IF = 3A http://www.luguang.cn mail:[email protected] BYW98-200 High Efficiency Fast Recovery Rectifier Diodes Fig. 1: Average forward power dissipation versus average forward current. Fig. 2: Average forward current versus ambient temperature (δ=0.5). IF(av)(A) PF(av)(W) 3.5 3.5 δ = 0.05 3.0 δ = 0.1 δ = 0.2 δ=1 δ = 0.5 Rth(j-a)=Rth(j-l) 3.0 2.5 2.5 2.0 2.0 1.5 1.5 Rth(j-a)=75°C/W 1.0 1.0 T 0.5 δ=tp/T IF(av) (A) 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 T 0.5 tp 3.5 Fig. 3: Thermal resistance versus lead length. 0.0 δ=tp/T 0 Tamb(°C) tp 25 50 75 100 125 150 Fig. 4: Variation of thermal impedance junction to ambient versus pulse duration (recommended pad layout, epoxy FR4, e(Cu)=35µm). Rth(°C/W) Zth(j-a)/Rth(j-a) 90 1.00 80 δ = 0.5 Rth(j-a) 70 δ = 0.2 60 50 0.10 40 δ = 0.1 Rth(j-l) 30 T 20 Single pulse 10 0 tp(s) Lleads(mm) 5 10 15 20 25 Fig. 5: Forward voltage drop versus forward current (maximum values). 70.00 0.01 1E-1 1E+0 1E+1 δ=tp/T tp 1E+2 5E+2 Fig. 6: Junction capacitance versus reverse voltage applied (typical values). IFM(A) C(pF) 100 F=1MHz Tj=25°C Tj=100°C (Typical values) 10.00 50 Tj=25°C Tj=100°C 1.00 20 VFM(V) 0.10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 http://www.luguang.cn VR(V) 10 1 10 mail:[email protected] 100 200 BYW98-200 High Efficiency Fast Recovery Rectifier Diodes Fig. 7: Reverse recovery time versus dIF/dt. Fig. 8: Peak reverse recovery current versus dIF/dt. trr(ns) 2.5 100 IF=3A 90% confidence Tj=100°C 80 IRM(A) IF=3A 90% confidence Tj=100°C 2.0 Tj=100°C Tj=100°C 1.5 60 40 1.0 Tj=25°C Tj=25°C 0.5 20 dIF/dt(A/µs) 0 1 10 100 0.0 dIF/dt(A/µs) 1 10 Fig. 9: Dynamic parameters versus junction temperature. % 250 IF=3A dIF/dt=50A/µs VR=30V Qrr 200 IRM 150 100 25 trr Tj(°C) 50 75 100 125 http://www.luguang.cn 150 mail:[email protected] 100