BYW100-200 200V HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES 1.5A FEATURES VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr AND IRM AT 100°C UNDER USERS CONDITIONS MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ABSOLUTE RATINGS (limiting values) Symbol VRRM . Parameter Repetitive peak reverse voltage Value 200 Unit V IFRM Repetitive peak forward current * tp = 5 µs F = 1KHz 80 A IF(AV) Average forward current * Ta = 95°C δ = 0.5 1.5 A IFSM Surge non repetitive forward current tp=10 ms sinusoidal 50 A Tstg Storage temperature range -65 +150 °C + 150 °C 230 °C Tj Maximum operating junction temperature TL Maximum lead temperature for soldering during 10s at 4mm from case STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF ** Parameter Tests conditions Max. Unit Tj = 25°C 10 µA Tj = 100°C 0.5 mA 1.2 V Reverse leakage current VR = VRRM Forward voltage drop IF = 4.5 A Tj = 25°C IF = 1.5 A Tj = 100°C Min. Typ. 0.78 0.85 Typ. Max. Unit 35 ns RECOVERY CHARACTERISTICS Symbol Tests conditions Min. trr IF = 1 A tfr IF = 1.5 A dIF/dt = -50 A/µs Measured at 1.1 x VF max. Tj = 25°C 30 ns VFP IF = 1.5 A dIF/dt = -50 A/µs Tj = 25°C 5 V Qrr IF = 1.5 A dIF/dt = -20 A/µs VR ≤ 30 V Tj = 25°C 10 nC dIF/dt = - 50 A/µs E-mail: [email protected] VR = 30 V 1 of 2 Tj = 25°C Web Site: www.taychipst.com BYW100-200 200V HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES RATINGS AND CHARACTERISTIC CURVES Fig. 1: Average forward power dissipation versus average forward current. PF(av)(W) 1.6 δ = 0.05 δ = 0.2 δ = 0.1 δ=1 δ = 0.5 1.4 1.2 1.0 0.8 0.6 T 0.4 0.2 δ=tp/T IF(av) (A) 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 tp 1.6 1.8 Fig. 3: Thermal resistance versus lead length. BYW100-200 Fig. 2: Average forward current versus ambient temperature (δ=0.5). 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 IF(av)(A) Rth(j-a)=Rth(j-l) Rth(j-a)=100°C/W Tamb(°C) 0 25 50 75 100 125 150 Fig. 4: Variation of thermal impedance junction to ambient versus pulse duration (recommended pad Rth(°C/W) 110 100 90 80 70 60 50 40 30 20 10 0 1.5A Zth(j-a)/Rth(j-a) 1.00 Rth(j-a) δ = 0.5 δ = 0.2 Rth(j-l) 0.10 δ = 0.1 Single pulse Lleads(mm) 5 10 15 20 25 Fig. 5: Forward voltage drop versus forward current (maximum values). 50.00 0.01 1E-2 tp(s) 1E-1 1E+0 1E+1 1E+2 5E+2 Fig. 6: Junction capacitance versus reverse voltage applied (typical values). IFM(A) 20 C(pF) F=1MHz Tj=25°C Tj=100°C (Typical values) 10 10.00 Tj=25°C 5 Tj=100°C 1.00 2 VFM(V) 0.10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 Fig. 7: Reverse recovery time versus dIF/dt . 150 VR(V) 1 1 100 200 Fig. 8: Peak reverse recovery current versus dIF/dt. trr(ns) 2.5 IF=1.5A VR=30V 90% confidence Tj=100°C 10 IRM(A) IF=1.5A VR=30V 90% confidence 2.0 100 1.5 Tj=100°C Tj=25°C 1.0 50 Tj=25°C 0.5 0 dIF/dt(A/µs) 1 E-mail: [email protected] 10 100 2 of 2 0.0 dIF/dt(A/µs) 1 10 100 Web Site: www.taychipst.com