Product specification 1N4150W SOD-123 Unit: mm 2.7 +0.05 1.1-0.05 +0.1 0.55-0.1 +0.1 -0.1 Features +0.1 1.6-0.1 Silicon Epitaxial Planar Diode Fast general purpose and switching. +0.1 3.7-0.1 This diods is also available in other case styles including: the DO-35 case with the type designation 1N4150 and 0.50 0.1max 0.35 +0.05 0.1-0.02 the Mini-MELF case with the type disignation LL4150. Absolute Maximum Ratings Ta = 25 Paramater Peak Reverse voktage Symbol Value Unit VRM 50 V Io 200 mA Maximum Average Rectified Current (1) Maximum Power Dissipation at Tamb = 25 Ptot 410 Maximum Forward Voltage Drop at IF = 200mA VF 1.0 mW V Maximum Reverse Current at VR = 50 V IR 100 nA Maximum Reverse Recovery Time at IF = 10 to 200 mA, to 0.1 IF Trr 4.0 ns Maximum Junction Temperature Tj 150 Storage Temperature Range Ts -65 to+150 NOTES:: (1) Valid provided that electrodes are kept at ambient temperature http://www.twtysemi.com [email protected] 4008-318-123 1 of 1