Product specification 1N5817W-1N5819W SOD-123 Unit: mm 2.7 +0.05 1.1-0.05 +0.1 0.55-0.1 +0.1 -0.1 +0.1 1.6-0.1 Features For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. +0.1 3.7-0.1 0.1max 0.50 +0.05 0.1-0.02 0.35 Absolute Maximum Ratings Ta = 25 Parameter Symbol 1N5817W 1N5818W 1N5819W Unit Non-Repetitive Peak reverse voltage VRM 20 30 40 V Peak repetitive Peak reverse voltage VRRM Working Peak Reverse Voltage VRWM 20 30 40 V 14 21 28 V DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) IO 1 Peak forward surge current @=8.3ms IFSM 25 A Repetitive Peak Forward Current IFRM 625 mA Pd 250 mW 500 K/W Average Rectified Output Current Power Dissipation Thermal Resistance Junction to Ambient R Storage temperature TSTG JA A -65 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons 1N5817W Reverse breakdown voltage 1N5818W 1N5817W 1N5818W 1N5819W 1N5818W IR VF 1N5819W Diode capacitance Max IR= 1mA Unit V 30 40 1N5817W Forward voltage Typ 20 V(BR) 1N5819W Reverse voltage leakage current Min CD VR=20V VR=30V VR=40V IF=1A IF=3A IF=1A IF=3A IF=1A IF=3A 1 0.45 0.75 0.55 0.875 0.6 0.9 VR=4V, f=1MHz 120 mA V V V pF Marking NO. 1N5817W 1N5818W 1N5819W Marking SJ SK SL http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification 1N5817W-1N5819W Typical Characteristics Fig.1 Forward Current Derating Curve Fig.2 Maximum Non-Repetitive Peak Forward Surge Current Fig.3 Typical Instantaneous Forward Characteristics Fig.5 Typical Junction Capacitance http://www.twtysemi.com [email protected] Fig.4 Typical Reverse Characteristics Fig.6 Typical Transient Thermal Impedance 4008-318-123 2 of 2