TYSEMI 2N5401

Transistor
IC
Transistors
DIP
SMDType
Type
Type
SMD
DIP
Type
Product specification
2N5401
TO-92
■ Features
● Switching and amplification in high voltage
● Applications such as telephony
● Low current(max. 600mA)
● High voltage(max.150V)
1
2 3
1. Emitter
2. Base
3. Collector
■ Absolute Maximum Ratings Ta = 25℃
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
-160
V
Collector-emitter voltage
VCEO
-150
V
Emitter-base voltage
VEBO
-5
V
Collector current-continuous
IC
-600
mA
Collector Power Dissipation
Pc
625
mW
TJ, Tstg
-55 to +150
℃
Junction and storage temperature
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC = -100 μA, IE = 0
-160
V
Collector-emitter breakdown voltage
V(BR)CEO IC =- 1.0 mA, IB = 0
-150
V
Emitter-base breakdown voltage
V(BR)EBO IE = -10 μA, IC = 0
-5
V
Collector cutoff current
ICBO
VCB =- 120 V, IE = 0
-50
nA
Emitter cutoff current
IEBO
VEB = -3.0 V, IC = 0
-50
nA
IC = -1.0 mA, VCE = -5 V
50
DC current gain
hFE
IC = -10 mA, VCE = -5 V
60
IC = -50 mA, VCE = -5 V
50
240
Collector-emitter saturation voltage
VCE(sat) IC = -50 mA, IB = -5.0 mA
-0.5
V
Base-emitter saturation voltage
VBE(sat) IC = -50 mA, IB = -5.0 mA
-1.0
V
300
MHz
Transiston frequency
http://www.twtysemi.com
fT
VCE=-5V,IC=-10mA,f=30MHz
[email protected]
100
4008-318-123
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