Transistor IC Transistors DIP SMDType Type Type SMD DIP Type Product specification 2N5401 TO-92 ■ Features ● Switching and amplification in high voltage ● Applications such as telephony ● Low current(max. 600mA) ● High voltage(max.150V) 1 2 3 1. Emitter 2. Base 3. Collector ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Collector-base voltage Parameter VCBO -160 V Collector-emitter voltage VCEO -150 V Emitter-base voltage VEBO -5 V Collector current-continuous IC -600 mA Collector Power Dissipation Pc 625 mW TJ, Tstg -55 to +150 ℃ Junction and storage temperature ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC = -100 μA, IE = 0 -160 V Collector-emitter breakdown voltage V(BR)CEO IC =- 1.0 mA, IB = 0 -150 V Emitter-base breakdown voltage V(BR)EBO IE = -10 μA, IC = 0 -5 V Collector cutoff current ICBO VCB =- 120 V, IE = 0 -50 nA Emitter cutoff current IEBO VEB = -3.0 V, IC = 0 -50 nA IC = -1.0 mA, VCE = -5 V 50 DC current gain hFE IC = -10 mA, VCE = -5 V 60 IC = -50 mA, VCE = -5 V 50 240 Collector-emitter saturation voltage VCE(sat) IC = -50 mA, IB = -5.0 mA -0.5 V Base-emitter saturation voltage VBE(sat) IC = -50 mA, IB = -5.0 mA -1.0 V 300 MHz Transiston frequency http://www.twtysemi.com fT VCE=-5V,IC=-10mA,f=30MHz [email protected] 100 4008-318-123 1 of 1