TYSEMI KC817A

Transistors
SMD Type
Product specification
KC817A(BC817A)
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
0.4
3
1
High current gain.
0.55
High collector current.
+0.1
1.3-0.1
+0.1
2.4-0.1
For general AF applications.
2
+0.1
0.95-0.1
+0.1
1.9-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
+0.1
0.38-0.1
0-0.1
+0.1
0.97-0.1
Low collector-emitter saturation voltage.
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
45
V
Emitter-base voltage
VEBO
5
V
Collector current (DC)
IC
500
mA
Peak collector current
ICM
1
A
Base current
IB
100
mA
mW
power dissipation
PD
310
Junction temperature
Tj
150
Storage temperature
Tstg
-65 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Collector-to-base breakdown voltage
VCBO
IC = 10
A, IE = 0
50
Collector-to-emitter breakdown voltage
Typ
Max
Unit
V
VCEO
IC = 10 mA, IB = 0
45
V
Emitter-to-base breakdown voltage
VEBO
IE = 10
5
V
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
A, IC = 0
VCB = 25 V, IE = 0
100
nA
VCB = 25 V, IE = 0 , TA = 150
50
A
100
nA
VEB = 4 V, IC = 0
KC817A-16
DC current gain *
hFE
KC817A-25
IC = 100 mA, VCE = -1 V
KC817A-40
100
160
250
160
250
400
250
350
630
Collector saturation voltage *
VCE(sat) IC = 500 mA, IB = 50 mA
0.7
V
Base to emitter voltage *
VBE(sat) IC = 500 mA, IB = 50 mA
1.2
V
Collector-base capacitance
CCb
VCB = 10 V, f = 1 MHz
6
pF
Emitter-base capacitance
Ceb
VEB = 0.5 V, f = 1 MHz
60
pF
IC = 50 mA, VCE = 5 V, f = 100 MHz
170
MHz
Transition frequency
* Pulsed: PW
fT
350 ìs, duty cycle
2%
Marking
NO.
KC817A-16
KC817A-25
KC817A-40
Marking
6A
6B
6C
http://www.twtysemi.com
[email protected]
4008-318-123
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