Transistors SMD Type Product specification KC817A(BC817A) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 High current gain. 0.55 High collector current. +0.1 1.3-0.1 +0.1 2.4-0.1 For general AF applications. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 Low collector-emitter saturation voltage. 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 45 V Emitter-base voltage VEBO 5 V Collector current (DC) IC 500 mA Peak collector current ICM 1 A Base current IB 100 mA mW power dissipation PD 310 Junction temperature Tj 150 Storage temperature Tstg -65 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Collector-to-base breakdown voltage VCBO IC = 10 A, IE = 0 50 Collector-to-emitter breakdown voltage Typ Max Unit V VCEO IC = 10 mA, IB = 0 45 V Emitter-to-base breakdown voltage VEBO IE = 10 5 V Collector cutoff current ICBO Emitter cutoff current IEBO A, IC = 0 VCB = 25 V, IE = 0 100 nA VCB = 25 V, IE = 0 , TA = 150 50 A 100 nA VEB = 4 V, IC = 0 KC817A-16 DC current gain * hFE KC817A-25 IC = 100 mA, VCE = -1 V KC817A-40 100 160 250 160 250 400 250 350 630 Collector saturation voltage * VCE(sat) IC = 500 mA, IB = 50 mA 0.7 V Base to emitter voltage * VBE(sat) IC = 500 mA, IB = 50 mA 1.2 V Collector-base capacitance CCb VCB = 10 V, f = 1 MHz 6 pF Emitter-base capacitance Ceb VEB = 0.5 V, f = 1 MHz 60 pF IC = 50 mA, VCE = 5 V, f = 100 MHz 170 MHz Transition frequency * Pulsed: PW fT 350 ìs, duty cycle 2% Marking NO. KC817A-16 KC817A-25 KC817A-40 Marking 6A 6B 6C http://www.twtysemi.com [email protected] 4008-318-123 1 of 1