TYSEMI KC817-25

Product specification
KC817-25
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
■ Features
0.4
3
● High current gain.
1
● Low collector-emitter saturation voltage
0.55
● High collector current.
+0.1
1.3-0.1
+0.1
2.4-0.1
● For general AF applications.
2
+0.1
0.95-0.1
+0.1
1.9-0.1
+0.05
0.1-0.01
+0.1
0.97-0.1
● Complementary types: KC807 (PNP)
0-0.1
+0.1
0.38-0.1
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
45
V
Emitter-base voltage
VEBO
5
V
Collector current (DC)
IC
500
mA
Peak collector current
ICM
1
A
power dissipation
PD
300
mW
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-55 to +150
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-to-base breakdown voltage
V(BR)CBO IC = 10 μA, IE = 0
50
V
Collector-to-emitter breakdown voltage
V(BR)CEO IC = 10 mA, IB = 0
45
V
Emitter-to-base breakdown voltage
V(BR)EBO IE = 10μA, IC = 0
5
V
Collector cutoff current
ICBO
VCB = 45 V, IE = 0
100
nA
Emitter cutoff current
IEBO
VEB =5 V , IC = 0
100
nA
DC current gain *
hFE
VCE = 1 V,IC = 100 mA
160
VCE = 1 V,IC = 500 mA
40
400
Collector saturation voltage *
VCE(sat) IC = 500 mA, IB = 50 mA
0.7
V
Base to emitter voltage *
VBE(sat) IC = 500 mA, IB = 50 mA
1.2
V
Collector-base capacitance
Transition frequency
COb
fT
VCB = 10 V, f = 1 MHz
10
IC =10 m A, VCE = 5 V, f = 100 MHz
100
pF
MHz
* Pulsed: PW ≤ 350 μs, duty cycle ≤ 2%
■ Marking
Marking
6BW
1
http://www.twtysemi.com
[email protected]
4008-318-123
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