Transistors SMD Type Product specification 2SA1682 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 High breakdown voltage. 0.4 3 Features 1 frequency chacateristic (Cre : 1.5pF typ). 0.55 Small reverse transfer capacitance and excellent high 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -300 V Collector-emitter voltage VCEO -300 V Emitter-base voltage VEBO -5 V Collector current IC -50 mA Collector current (pulse) ICP -100 mA Collector dissipation PC 250 mW Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors SMD Type Product specification 2SA1682 Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Testconditons IcBO VCB = -200V , IE = 0 Min IEBO VEB = -4V , IC = 0 hFE 1 VCE = -6V , IC = -0.1 mA 100 hFE 2 VCE = -6V , IC = -1 mA 100 VCE = -30V , IC = -10 mA fT Typ Max Unit -0.1 ìA -0.1 ìA 320 70 MHz Collector-emitter saturation voltage VCE(sat) IC = -10mA , IB = -3mA -1.0 V Base-emitter saturation voltage VBE(sat) IC = -10mA , IB = -3mA -1.0 V Collector-to-base breakdown voltage V(BR)CBO IC = -10ìA , IE = 0 -300 V Collector-to-emitter breakdown voltage V(BR)CEO IC = -1mA , RBE = -300 V Emitter-base breakdown voltage V(BR)EBO IE = -10ìA , IC = 0 -5 V Output capacitance Cob VCB = -30V , f = 1MHz 2.4 pF Reverse transfer capacitance Cre VCB = -30V , f = 1MHz 1.5 pF hFE1/ hFE2 1.0 DC current gain ratio hFE ratio hFE Classification CS Marking Rank 4 5 hFE 100 200 160 320 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2