Product specification 2SA1580 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Adoption of FBET process. 1 0.55 Small reverse transfer capacitance. +0.1 1.3-0.1 +0.1 2.4-0.1 High fT. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -70 V Collector-emitter voltage VCEO -60 V Emitter-base voltage VEBO -4 V Collector current IC -50 mA Collector current (pulse) Icp -100 mA Collector dissipation PC 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit -0.1 ìA -1 ìA Collector cutoff current ICBO VCB = -40V, IE=0 Emitter cutoff current IEBO VEB = -3V, IC=0 DC current gain hFE VCE = -10V , IC = -10mA 60 fT VCE = -10V , IC = -10mA 350 rbb,cc VCE = -10V , IC = -10mA 8 ps Cob VCB = -10V , f = 1.0MHz 1.7 pF Cre VCB = -10V , f = 1.0MHz 1.3 Gain bandwidth product Base-collector time constant Output capacitance Reverse transfer capacitance 270 700 MHz pF Collector-emitter saturation voltage VCE(sat) IC = -20mA , IB = -2mA -0.6 V Base-emitter saturation voltage VBE(sat) IC = -20mA , IB = -2mA -1 V Collector-base breakdown voltage V(BR)CBO IC = -10ìA , IE = 0 -70 V Collector-emitter breakdown voltage V(BR)CEO IC = -1mA , RBE = -60 V Emitter-base breakdown voltage V(BR)EBO IE = -10ìA , IC = 0 -4 V hFE Classification QL Marking Rank hFE 3 60 120 4 90 180 5 135 270 1 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1