TYSEMI 2SA1815

Transistors
IC
SMD Type
Product specification
2SA1815
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
1
High cutoffrequency:fT=750MHz typ
0.55
High power gain:PG=25dB typ(f=100MHz)
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
Low collector-to-emitter saturation voltage
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-15
V
Collector-emitter voltage
VCEO
-12
V
Emitter-base voltage
VEBO
-3
V
Collector current
IC
-50
mA
mW
Collector dissipation
PC
250
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector cutoff current
IcBO
VCB = -12V , IE = 0
Min
Typ
Emitter cutoff current
IEBO
VEB = -2V , IC = 0
DC current Gain
hFE
VCE = -10V , IC = -5mA
Gain bandwidth product
Ft
VCE = -10V , IC = -5mA
750
60
Output Capacitance
Cob
VCB=-10V,f=1MHz
1.2
Cob
VCB=-10V,f=1MHz
0.9
VCE(sat)
IC=-10mA,IB=-1mA
-0.1
VCE=-10V,IC=-10mA,f=100MHz
25
Power Gain
PG
Unit
-0.1
ìA
-0.1
ìA
270
Reverse Transfer Capacitance
C-E Saturation Voltage
Max
MHz
1.6
pF
pF
-0.3
V
dB
hFE Classification
JS
Marking
Rank
3
4
5
hFE
60 to 120
90 to 180
135 to 270
http://www.twtysemi.com
[email protected]
4008-318-123
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