TYSEMI 2SA1772

Transistors
SMD Type
Product specification
2SA1772
6.50
+0.2
5.30-0.2
+0.15
-0.15
Features
+0.15
1.50 -0.15
TO-252
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
2.3
+0.1
0.60-0.1
+0.15
5.55 -0.15
+0.25
2.65 -0.1
0.127
max
+0.28
1.50 -0.1
+0.1
0.80-0.1
+0.15
0.50 -0.15
+0.2
9.70 -0.2
Large current capacity (IC=1A)
3 .8 0
High breadown voltage
+0.15
4.60-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
VCBO
-400
V
Collector to Emitter Voltage
VCEO
-400
V
Emitter to Base Voltage
VEBO
-5
V
Collector Current (DC)
IC
-1
A
Collector Current (Pulse)
IC
-2
A
1
W
15
W
Collector Dissipation
Pc
Tc=25
Junction Tmeperature
Tj
150
Storage Temperature
Tstg
-55 to 150
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Transistors
SMD Type
Product specification
2SA1772
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB=-300V,IE=0
-0.1
ìA
Emitter Cutoff Current
IEBO
VEB=-4V,IC=0
-0.1
ìA
DC Current Gain*
hFE
VCE=-10V,IC=-100mA
fT
VCE=-10V,IC=-50mA
VCE(sat)
IC=-200mA,IB=-20mA
B-E Saturation Voltage
VBE(sat)
IC=-200mA,IB=-20mA
C-B Breakdown Voltage
V(BR)CBO
IC=-10ìA,IE=0
-400
V
C-E Breakdown Voltage
V(BR)CEO
IC=-1mA,RBE=
-400
V
E-B Breakdown Voltage
V(BR)EBO
IE=-10ìA,IC=0
-5
Gain- Bandwidth Product
C-E Saturation Voltage
VCB=-30V,f=1MHz
40
200
50
-1.0
V
-1.0
V
V
12
Output Capacitance
Cob
Turn-ON Time
ton
0.25
Storage Time
tstg
3
tf
0.3
Fall Time
MHz
pF
ìs
hFE Classification
Rank
C
D
E
hFE
40 to 80
60 to 120
100 to 200
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2