Transistors SMD Type Product specification 2SA1772 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Large current capacity (IC=1A) 3 .8 0 High breadown voltage +0.15 4.60-0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO -400 V Collector to Emitter Voltage VCEO -400 V Emitter to Base Voltage VEBO -5 V Collector Current (DC) IC -1 A Collector Current (Pulse) IC -2 A 1 W 15 W Collector Dissipation Pc Tc=25 Junction Tmeperature Tj 150 Storage Temperature Tstg -55 to 150 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors SMD Type Product specification 2SA1772 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector Cutoff Current ICBO VCB=-300V,IE=0 -0.1 ìA Emitter Cutoff Current IEBO VEB=-4V,IC=0 -0.1 ìA DC Current Gain* hFE VCE=-10V,IC=-100mA fT VCE=-10V,IC=-50mA VCE(sat) IC=-200mA,IB=-20mA B-E Saturation Voltage VBE(sat) IC=-200mA,IB=-20mA C-B Breakdown Voltage V(BR)CBO IC=-10ìA,IE=0 -400 V C-E Breakdown Voltage V(BR)CEO IC=-1mA,RBE= -400 V E-B Breakdown Voltage V(BR)EBO IE=-10ìA,IC=0 -5 Gain- Bandwidth Product C-E Saturation Voltage VCB=-30V,f=1MHz 40 200 50 -1.0 V -1.0 V V 12 Output Capacitance Cob Turn-ON Time ton 0.25 Storage Time tstg 3 tf 0.3 Fall Time MHz pF ìs hFE Classification Rank C D E hFE 40 to 80 60 to 120 100 to 200 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2