Transistors SMD Type Product specification 2SC4616 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 400V) +0.2 9.70 -0.2 High blocking voltage(VCEO +0.15 0.50 -0.15 Large current calcity (IC=2A) +0.15 4.60-0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO 400 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 5 V Peak collector current ICP 4 A Collector current IC 2 A Collector power dissipation PC TC=25 1 W 15 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors SMD Type Product specification 2SC4616 Electrical Characteristics Ta = 25 Max Unit Collector cut-off Current Parameter Symbol ICBO VCB=300V,IE=0 Testconditons Min Typ 1 ìA Emitter Cut-off Current IEBO VEB=4V,IC=0 1 ìA DC Current Gain hFE VCE=10V,IC=100mA Gain-Bandwidth product fT VCE=10V,IC=100mA C-E Saturation Voltage VCE(sat) IC=500mA,IB=50mA 1 V B-E Saturation Voltage VBE(sat) IC=500mA,IB=50mA 1 V C-B Breakdown Voltage V(BR)CBO IC=10ìA,IE=0 400 V C-E Breakdown Voltage V(BR)CEO IC=1mA,RBE= 400 V E-B Breakdown Voltage V(BR)EBO IE=10ìA,IC=0 5 V 40 200 60 Output capacitance cob Turn-ON Time ton 0.085 Storage Time tstg 4 tr 0.6 Fall Time VCB=30V,f=1MHz MHz 15 pF ìs hFE Classification TYPE C D E hFE 40 to 80 60 to 120 100 to 200 http://www.twtysemi.com [email protected] 4008-318-123 2of 2