TYSEMI 2SB1219A

Product specification
2SB1219A
Features
Large collector current IC.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-60
V
Collector-emitter voltage
VCEO
-50
V
Emitter-base voltage
VEBO
-5
V
Peak collector current
ICP
-1
A
Collector current
IC
-500
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base voltage
VCBO
IC = -10 ìA, IE = 0
-60
V
Collector-emitter voltage
VCEO
IC = -2 mA, IB = 0
-50
V
Emitter-base voltage
VEBO
IE = -10 ìA, IC = 0
-5
V
Collector-base cutoff current
ICBO
VCB = -20 V, IE = 0
hFE
VCE = -10 V, IC = -150 mA
Forward current transfer ratio
-0.1
85
340
Collector-emitter saturation voltage
VCE(sat) IC = -300 mA, IB = -30 mA
-0.35
-0.6
Base-emitter saturation voltage
VBE(sat) IC = -300 mA, IB = -30 mA
-1.1
-1.5
Transition frequency
fT
Collector output capacitance
Cob
VCB = -10 V, IE = 50 mA, f = 200 MHz
VCB = -10 V, IE = 0, f = 1 MHz
ìA
200
6
V
MHz
15
pF
hFE Classification
Marking
DQ
DR
DS
D
hFE
85 170
120 240
170 340
85 340
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4008-318-123
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