Product specification 2SB1219A Features Large collector current IC. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Peak collector current ICP -1 A Collector current IC -500 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage VCBO IC = -10 ìA, IE = 0 -60 V Collector-emitter voltage VCEO IC = -2 mA, IB = 0 -50 V Emitter-base voltage VEBO IE = -10 ìA, IC = 0 -5 V Collector-base cutoff current ICBO VCB = -20 V, IE = 0 hFE VCE = -10 V, IC = -150 mA Forward current transfer ratio -0.1 85 340 Collector-emitter saturation voltage VCE(sat) IC = -300 mA, IB = -30 mA -0.35 -0.6 Base-emitter saturation voltage VBE(sat) IC = -300 mA, IB = -30 mA -1.1 -1.5 Transition frequency fT Collector output capacitance Cob VCB = -10 V, IE = 50 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz ìA 200 6 V MHz 15 pF hFE Classification Marking DQ DR DS D hFE 85 170 120 240 170 340 85 340 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1