TYSEMI 2SB1527

Transistors
IC
SMD Type
Product specification
2SB1527
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
0.4
3
Contains a diode between collector and emitter.
1
0.55
Low saturation voltage.
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
Contains a bias resistor between base and emitter.
+0.05
0.1-0.01
+0.1
0.97-0.1
Large current capacity.
0-0.1
small-sized hybrid ICs.
+0.1
0.38-0.1
Compact package making it easy to realize highdensity,
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-20
V
Collector-emitter voltage
VCEO
-15
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-0.8
A
Collector current (pulse)
ICP
-2
A
Collector dissipation
PC
200
mW
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
-1
ìA
Collector cutoff current
ICBO
VCB = -15V , IE = 0
DC current Gain
hFE
VCE = -2V , IC = -0.5A
fT
VCE = -2V , IC = -0.5A
250
MHz
Cob
VCB = -10V , f = 1MHz
30
pF
Gain bandwidth product
Output capacitance
70
Collector-emitter saturation voltage
VCE(sat) IC = -500mA , IB = -10mA
-0.2
-0.4
V
Base-emitter saturation voltage
VBE(sat) IC = -500mA , IB = -10mA
-.095
-1.3
V
Collector-to-base breakdown voltage
V(BR)CBO IC = -10ìA , IE = 0
-20
Collector-to-emitter breakdown voltage
V(BR)CEO IC = -1mA , RBE =
-15
Diode forward voltage
VF
Base-emitter resistance
RBE
V
V
IF=-0.5A
-1.5
1
V
KÙ
Marking
Marking
NS
http://www.twtysemi.com
[email protected]
4008-318-123
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