Transistors SMD Type PNP/NPN Epitaxial Planar Silicon Transistors 2SB1394 Features Contains input resistance (R1), base-to-emitter resistance (RBE). Contains diode between collector and emitter. Low saturation voltage. Large current capacity. Small-sized package making it easy to provide highdensity, small-sized hybrid ICs. Electrical Connection Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -40 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -6 V Collector current IC -3 A Collector current (pulse) ICP -5 A Collector dissipation PC * 1.5 W Tj 150 Tstg -55 to +150 Jumction temperature Storage temperature 2 * Mounted on ceramic board (250mm X0.8mm) www.kexin.com.cn 1 Transistors SMD Type 2SB1394 Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current ICBO DC current Gain hFE Gain bandwidth product Output capacitance Collector-emitter saturation voltage Min Typ VCB = -30V , IE = 0 VCE = -2V , IC = -0.5A 70 VCE = -2V , IC = -2A 50 Max Unit -1 ìA fT VCE = -2V , IC = -0.5A 100 MHz Cob VCB = -10V , f = 1MHz 55 pF VCE(sat) IC = -1A , IB = -50mA -0.18 -0.4 V -1.5 -4 V Base-emitter on state voltage VBE(ON) VCE = -2V , IC = -1A -0.7 Collector-to-base breakdown voltage V(BR)CBO IC = -10ìA , IE = 0 -40 V Collector-to-emitter breakdown voltage V(BR)CEO1 IC = -10ìA , RBE = -40 V Collector-to-emitter breakdown voltage V(BR)CEO2 IC = -10mA , RBE = -30 Diode forward voltage VF Base-emitter resistance RBE Base resistance R1 Marking Marking 2 Testconditons BN www.kexin.com.cn IF=0.5A -1.5 0.8 60 90 V KÙ 120 Ù