Product specification 2SB1397 Features Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between base and emitter. Large current capacity. Small-sized package making it easy to provide highdensity, small-sized hybrid ICs. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -25 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V IC -2 A Collector current Collector current (pulse) ICP -4 A Collector dissipation PC * 1.3 W Tj 150 Tstg -55 to +150 Jumction temperature Storage temperature 2 * Mounted on ceramic board (250mm X0.8mm) Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current ICBO DC current Gain hFE Gain bandwidth product Testconditons Min Typ VCB = -20V , IE = 0 VCE = -2V , IC = -0.5A 70 VCE = -2V , IC = -2A 50 Max Unit -1 nA fT VCE = -2V , IC = -0.5A 300 MHz Cob VCB = -10V , f = 1MHz 40 pF Collector-emitter saturation voltage VCE(sat) IC = -1A , IB = -50mA -0.25 Base-emitter saturation voltage VBE(sat) IC = -1A , IB = -50mA Output capacitance -0.5 V -1.5 V Collector-to-base breakdown voltage V(BR)CBO IC = -10ìA , IE = 0 -25 V Collector-to-emitter breakdown voltage V(BR)CEO1 IC = -10ìA , RBE = -25 V Collector-to-emitter breakdown voltage V(BR)CEO2 IC = -10mA , RBE = -20 Diode forward voltage VF Base-emitter resistance RBE IF=0.5A -1.5 1.6 V KÙ Marking Marking BP http://www.twtysemi.com [email protected] 4008-318-123 1 of 1