TYSEMI 2SD1997

Transistors
IC
SMD Type
Product specification
2SD1997
Features
Contains diode between collector and emitter.
Low saturation voltage.
Large current capacity.
Small-sized package making it easy to provide highdensity,
small-sized hybrid ICs.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
3
A
Collector current (pulse)
ICP
5
A
Collector dissipation
PC
1.5
W
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cutoff current
IcBO
DC current Gain
hFE
Gain bandwidth product
Output capacitance
Testconditons
Min
Typ
VCB = 30V , IE = 0
VCE = 2V , IC = 0.5A
70
VCE = 2V , IC =2A
50
Max
Unit
1.0
ìA
fT
VCE = 2V , IC = 0.5A
100
MHz
Cob
VCB = 10V , f = 1MHz
40
pF
Collector-emitter saturation voltage
VCE(sat) IC = 1A , IB = 50mA
Base-emitter on state voltage
VBE(ON) ICE = 2V , IC = 1A
1
Collector-to-base breakdown voltage
V(BR)CBO IC = 10ìA , IE = 0
40
V
IC = 10ìA , RBE =
40
V
IC = 10mA , RBE =
3
Collector-to-emitter breakdown voltage
V(BR)CEO
Diode forward voltage
VF
Base-emitter resistance
RBE
Base resistance
R1
0.12
0.3
V
2
5
V
IF = 0.5A
1.5
0.8
120
160
V
kÙ
200
Ù
Marking
Marking
DO
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 1