Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1997 Features Contains diode between collector and emitter. Low saturation voltage. Large current capacity. Small-sized package making it easy to provide highdensity, small-sized hybrid ICs. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 6 V Collector current IC 3 A Collector current (pulse) ICP 5 A Collector dissipation PC 1.5 W Jumction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current IcBO DC current Gain hFE Gain bandwidth product Output capacitance Testconditons Min Typ VCB = 30V , IE = 0 VCE = 2V , IC = 0.5A 70 VCE = 2V , IC =2A 50 Max Unit 1.0 ìA fT VCE = 2V , IC = 0.5A 100 MHz Cob VCB = 10V , f = 1MHz 40 pF Collector-emitter saturation voltage VCE(sat) IC = 1A , IB = 50mA Base-emitter on state voltage VBE(ON) ICE = 2V , IC = 1A 1 Collector-to-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 40 V IC = 10ìA , RBE = 40 V IC = 10mA , RBE = 3 Collector-to-emitter breakdown voltage V(BR)CEO Diode forward voltage VF Base-emitter resistance RBE Base resistance R1 0.12 0.3 V 2 5 V IF = 0.5A 1.5 0.8 120 160 V kÙ 200 Ù Marking Marking DO www.kexin.com.cn 1