Product specification 2SC2411K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 NPN silicon transistor 0.55 Low VCE(sat). Optimal for low voltage operation. +0.1 1.3-0.1 +0.1 2.4-0.1 High ICMax. ICMax. = 0.5A 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 32 V Emitter-base voltage VEBO 5 V Collector current * IC 0.5 A Collector power dissipation PC 0.2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * PC must not be exceeded. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage VCBO IC = 100ìA 40 V Collector-emitter breakdown voltage VCEO IC = 1mA 32 V Emitter-base breakdown voltage VEBO IE = 100ìA 5 V Collector cutoff current ICBO VCB = 20V Emitter cutoff current IEBO VEB = 4V DC current gain hFE VCE = 3V, IC = 100mA Collector-emitter saturation voltage 120 Output capacitance Cob fT A 1 A 390 VCE(sat) IC/IB = 500mA/50mA Transition frequency 1 0.6 V VCB = 10V, IE = 0A, f = 1MHz 6.5 pF VCE = 5V, IE = -20mA, f = 100MHz 250 MHz hFE Classification Marking CQ Rank hFE CR Q 120 R 270 http://www.twtysemi.com 180 390 [email protected] 4008-318-123 1 of 1