Transistors SMD Type Product specification 2SC4061K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Low collector output capacitance. 1 0.55 High breakdown voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Ideal for chroma circuit. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 300 V Collector-emitter voltage VCEO 300 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Collector power dissipation PC 0.2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=50ìA 300 V Collector-emitter breakdown voltage BVCEO IC=100ìA 300 V Emitter-base breakdown voltage BVEBO IE=50ìA 5 Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio V ICBO VCB=200V 0.5 ìA IEBO VEB=4V 0.5 ìA VCE(sat) IC=50mA, IB=5mA 2 V hFE Output capacitance fT Transition frequency Cob VCE=10V, IC=10mA 56 VCE=30V, IE= -10mA, f=30MHz 50 VCB=30V, IE=0A, f=1MHz 180 100 MHz 3 pF hFE Classification Marking ANN ANP Rank N P hFE 56 120 http://www.twtysemi.com 82 180 [email protected] 4008-318-123 1 of 1