Transistors IC SMD Type Product specification 2SC5342UF Features Large collector current : IC=500mA Low collector saturation voltage enabling low-voltage operation 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 32 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Collector dissipation PC 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=100ìA, IE=0 40 V Collector-emitter breakdown voltage BVCEO IC=1mA, IB=0 32 V Emitter-base breakdown voltage BVEBO IE=10ìA, IC=0 5 V Collector cutoff current ICBO VCB=40V, IE=0 0.1 ìA Emitter cutoff current IEBO VEB=5V, IC=0 0.1 ìA DC current transfer ratio hFE VCE=1V, IC=100mA Collector-emitter saturation voltage 70 240 VCE(sat) IC=100mA, IB=10mA Transition frequency fT Output capacitance Cob VCE=6V, IE=-20mA VCB=6V, IE=0, f=1MHz 0.25 V 300 MHz 7 pF hFE Classification B Marking Rank O Y hFE 70 140 120 240 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1