Transistors SMD Type Product specification 2SC5356 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 High DC current gain: hFE = 15 (min) (IC = 0.15 A) +0.28 1.50 -0.1 High collectors breakdown voltage: VCEO = 800 V +0.15 0.50 -0.15 +0.2 9.70 -0.2 Excellent switching times: tf = 0.5 ìs (max) (IC = 1.2 A) 3 .8 0 Features +0.15 4.60-0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 900 V Collector-emitter voltage VCEO 800 V Emitter-base voltage V VEBO 7 Collector current ( DC) IC 3 Collector current (Pulse) ICP 5 Base current Collector power dissipation IB Ta = 25 PC Junction temperature http://www.twtysemi.com A W 25 TC = 25 Storage temperature range 1 1.5 A Tj 150 Tstg -55 to +150 [email protected] 4008-318-123 1 of 2 Transistors SMD Type Product specification 2SC5356 Electrical Characteristics Ta = 25 Max Unit Collector cut-off current Parameter ICBO VCB = 720 V, IE = 0 100 ìA Emitter cut-off current IEBO VEB = 7 V, IC = 0 10 ìA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 900 V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 800 V VCE = 5 V, IC = 1 mA 10 VCE = 5 V, IC = 0.15 A 15 DC current gain Symbol hFE Testconditons Min Typ Collector-emitter saturation voltage VCE (sat) IC = 1.2 A, IB = 0.24 A 1.0 V Base-emitter saturation voltage VBE (sat) IC = 2 A, IB = 0.24 A 1.3 V Switching time Rise time Switching time Storage time Switching time Fall time tr 0.7 tstg 4.0 tf 0.5 ìs Marking Marking C5356 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2