SMD Type Product specification 2SC3076 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Low Collectror Saturation Voltage:VCE(sat)=0.5V(Max.)(IC=1A) +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Excellent Switching Time :tstg=1.0ìs(Typ.) +0.15 4.60-0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V IC 2 A Collector current Base Current Collector power dissipation Ta=25 TC=25 IB 1 A PC 1.0 A PC 10 W Junction temperature Tj 150 Storage temperature Tstg -55 to 150 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors SMD Type Product specification 2SC3076 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cut-off current ICBO VCB = 50 V, IE = 0 1.0 ìA Emitter cut-off current IEBO VEB = 5 V, IC = 0 1.0 ìA Collector-emitter breakdown voltage V(BR)CEO IC = 10 mA, IB = 0 DC current gain hFE VCE = 2 V, IC = 0.5 A 70 VCE = 2 V, IC = 1.5A 40 Collector-emitter saturation voltage VCE (sat) IC = 1A, IB = 0.05A Base-emitter saturation voltage VBE (sat) IC = 1A, IB = 0.05A Transition Frequency fT 50 V 240 0.5 1.2 V V VCE=2V,IC=0.5A 80 MHz VCB = 10V, IE = 0, f = 1 MHz 30 pF Collector output capacitance Cob Switching Time Ture-on Time ton 0.1 ìS switching Time Storage Time tstg 1 ìS tf 0.1 ìS Switching Fall Time hFE Classification C3076 Marking Rank O Y hFE 70 140 120 240 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2