TYSEMI 2SC3076

SMD Type
Product specification
2SC3076
TO-252
6.50
+0.2
5.30-0.2
Features
+0.15
1.50 -0.15
+0.15
-0.15
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
Low Collectror Saturation Voltage:VCE(sat)=0.5V(Max.)(IC=1A)
+0.1
0.60-0.1
2.3
3 .8 0
+0.15
5.55 -0.15
0.127
max
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
+0.15
0.50 -0.15
+0.2
9.70 -0.2
Excellent Switching Time :tstg=1.0ìs(Typ.)
+0.15
4.60-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
IC
2
A
Collector current
Base Current
Collector power dissipation
Ta=25
TC=25
IB
1
A
PC
1.0
A
PC
10
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to 150
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[email protected]
4008-318-123
1 of 2
Transistors
SMD Type
Product specification
2SC3076
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
1.0
ìA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
1.0
ìA
Collector-emitter breakdown voltage
V(BR)CEO IC = 10 mA, IB = 0
DC current gain
hFE
VCE = 2 V, IC = 0.5 A
70
VCE = 2 V, IC = 1.5A
40
Collector-emitter saturation voltage
VCE (sat) IC = 1A, IB = 0.05A
Base-emitter saturation voltage
VBE (sat) IC = 1A, IB = 0.05A
Transition Frequency
fT
50
V
240
0.5
1.2
V
V
VCE=2V,IC=0.5A
80
MHz
VCB = 10V, IE = 0, f = 1 MHz
30
pF
Collector output capacitance
Cob
Switching Time Ture-on Time
ton
0.1
ìS
switching Time Storage Time
tstg
1
ìS
tf
0.1
ìS
Switching Fall Time
hFE Classification
C3076
Marking
Rank
O
Y
hFE
70 140
120 240
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2