Transistors SMD Type Silicon NPN Triple Diffused Mesa Type 2SC5355 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Features 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 +0.25 2.65 -0.1 High DC current gain: hFE = 20 (min) +0.28 1.50 -0.1 +0.2 9.70 -0.2 High collector breakdown voltage: VCEO = 400 V +0.15 0.50 -0.15 Excellent switching times: tr = 0.5 ìs (max), tf = 0.3 ìs (max) 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 600 V Collector-emitter voltage VCEO 400 V Emitter-base voltage V VEBO 7 Collector current ( DC) IC 5 Collector current (Pulse) ICP 7 Base current Collector power dissipation IB Ta = 25 PC Junction temperature A W 25 TC = 25 Storage temperature range 1 1.5 A Tj 150 Tstg -55 to +150 www.kexin.com.cn 1 Transistors SMD Type 2SC5355 Electrical Characteristics Ta = 25 Parameter Testconditons Min Typ Max Unit Collector cut-off current ICBO VCB = 480 V, IE = 0 100 ìA Emitter cut-off current IEBO VEB = 7 V, IC = 0 10 ìA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 600 V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 400 V DC current gain hFE VCE = 5 V, IC = 1 mA 12 VCE = 5 V, IC = 0.5 A 20 65 Collector-emitter saturation voltage VCE (sat) IC = 2 A, IB = 0.25 A 1.0 V Base-emitter saturation voltage VBE (sat) IC = 2 A, IB = 0.25 A 1.3 V Switching time Rise time Switching time Storage time Switching time Fall time Marking Marking 2 Symbol C5355 www.kexin.com.cn tr 0.5 tstg 2.0 tf 0.3 ìs