Transistors SMD Type Product specification 2SD1583-Z TO-252 Features +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Low VCE(sat). Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 High hFE. +0.15 4.60-0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 5 V Collector current (DC) IC 2 A Collector Current (pulse) *1 ICP 3 A PT 2 W Total power dissipation Ta = 25 *2 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * 1 Pulse Test PW 10ms, Duty Cycle 50%. *2 When mounted on ceramic substrate of 7.5cm2 X0.7mm http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors SMD Type Product specification 2SD1583-Z Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector cutoff current ICBO VCB = 20 V, IE = 0 Emitter cutoff current IEBO VEB = 5 V, IC = 0 DC current gain * hFE Min Typ VCE = 5 V, IC = 0.5 A 800 2000 VCE = 5 V, IC =50mA 600 2000 VCE = 5 V, IC = 2 A 500 1400 Max Unit 10 ìA 10 ìA 3200 Collector saturation voltage * VCE(sat) IC = 1.0 A, IB = 10 mA 0.18 0.5 Base saturation voltage * VBE(sat) IC = 1.0 A, IB = 10 mA 0.85 1.2 Gain bandwidth product fT Output capacitance Cob V V VCE = 5 V, IE = 100 mA 270 MHz VCB = 10 V, IE = 0, f = 1.0 MHz 20 pF Turn-on time ton IC = 1 A,VCC = 10 V 0.6 ìs Storage time tstg IB1=-IB2=10 mA 1.5 ìs 0.3 ìs Fall time * Pulsed: PW tf 350 ìs, duty cycle 2% hFE Classification Marking M L K hFE 800 1600 1000 2000 1600 3200 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2