TYSEMI 2SD1583-Z

Transistors
SMD Type
Product specification
2SD1583-Z
TO-252
Features
+0.15
1.50 -0.15
+0.15
6.50-0.15
+0.2
5.30-0.2
Low VCE(sat).
Unit: mm
+0.1
2.30-0.1
+0.8
0.50-0.7
2.3
+0.1
0.60-0.1
3 .8 0
+0.15
5.55 -0.15
0.127
max
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
+0.15
0.50 -0.15
+0.2
9.70 -0.2
High hFE.
+0.15
4.60-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
5
V
Collector current (DC)
IC
2
A
Collector Current (pulse) *1
ICP
3
A
PT
2
W
Total power dissipation Ta = 25
*2
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* 1 Pulse Test PW
10ms, Duty Cycle
50%.
*2 When mounted on ceramic substrate of 7.5cm2 X0.7mm
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Transistors
SMD Type
Product specification
2SD1583-Z
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector cutoff current
ICBO
VCB = 20 V, IE = 0
Emitter cutoff current
IEBO
VEB = 5 V, IC = 0
DC current gain *
hFE
Min
Typ
VCE = 5 V, IC = 0.5 A
800
2000
VCE = 5 V, IC =50mA
600
2000
VCE = 5 V, IC = 2 A
500
1400
Max
Unit
10
ìA
10
ìA
3200
Collector saturation voltage *
VCE(sat) IC = 1.0 A, IB = 10 mA
0.18
0.5
Base saturation voltage *
VBE(sat) IC = 1.0 A, IB = 10 mA
0.85
1.2
Gain bandwidth product
fT
Output capacitance
Cob
V
V
VCE = 5 V, IE = 100 mA
270
MHz
VCB = 10 V, IE = 0, f = 1.0 MHz
20
pF
Turn-on time
ton
IC = 1 A,VCC = 10 V
0.6
ìs
Storage time
tstg
IB1=-IB2=10 mA
1.5
ìs
0.3
ìs
Fall time
* Pulsed: PW
tf
350 ìs, duty cycle
2%
hFE Classification
Marking
M
L
K
hFE
800 1600
1000 2000
1600 3200
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2