TYSEMI 2SC2946

Transistors
SMD Type
Product specification
2SC2946
6.50
+0.2
5.30-0.2
+0.15
-0.15
Features
+0.15
1.50 -0.15
TO-252
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
2.3
+0.1
0.60-0.1
3 .8 0
+0.15
5.55 -0.15
0.127
max
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
ìs
+0.2
9.70 -0.2
High speed tf
+0.15
0.50 -0.15
High Votage VCEO=200V
+0.15
4.60-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
330
V
Collector to emitter voltage
VCEO
200
V
Emitter to base voltage
VEBO
7
V
Collector current
ICP
2
A
Collector peak current *1
IC
4
A
PT
2
W
Total Power dissipation Ta = 25
*2
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
*1 PW
10ms, Duty cycle 50%
*2 when mounted on ceramic substrate of 7.5cm2X0.7mm
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Transistors
SMD Type
Product specification
2SC2946
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
collector cutoff current
ICBO
VCB=250V,IE=0
1
ìA
emitter cutoff current
IEBO
VEB=5V,IC=0
1
ìA
DC current Gain *
hFE
VCE=5V,IC=100mA
20
VCE=5V,IC=1A
15
60
160
Collector Saturation Voltage *
VCE(sat)
IC=1A,IB=0.1A
1
V
Base Satruation Voltage *
VBE(sat)
IC=1A,IB=0.1A
1.5
V
Turn-on Time
ton
Storage Time
tstg
Fall Time
* Pulsed:PW
1
see Test circuit
2
ìs
1
tf
350ìs,Duty Cycle 2%
Switching Time(ton,tstg,tr) Test Circuit
hFE Classification
Marking
N
M
L
K
hFE
20 to 50
30 to 70
50 to 100
80 to 160
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2