Transistors SMD Type Product specification 2SA1413-Z Features 6.50 +0.2 5.30-0.2 +0.15 -0.15 High Voltage: VCEO=-600V +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 High speed:tr 1.0ìs +0.15 4.60-0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO -600 V Collector to Emitter Voltage VCEO -600 V Emitter to Base Voltage VEBO -7 V Collector Current (DC) IC -1 A Collector Current (Pulse) *1 IC -2 A PT 2 W Total power Dissipation (Ta=25 ) *2 Junction Tmeperature Tj 150 Storage Temperature Tstg -55 to 150 *1 pw 10ms,Duty Cycle 50% *2 When mounted on ceramic substrate of 7.5cm2X0.7mm http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors SMD Type Product specification 2SA1413-Z Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector Cutoff Current ICBO VCB=-600V,IE=0 -10 ìA Emitter Cutoff Current IEBO VEB=-7V,IC=0 -10 ìA DC Current Gain* hFE Collector Saturation Voltage * VCE(sat) Base Saturation Voltage * VCE=-5V,IC=-0.1A 30 58 VCE=-5V,IC=-0.5A 5 19 120 IC=-0.3A,IB=-60mA -0.28 -1 VBE(sat) IC=-0.3A,IB=-60mA -0.85 -1.2 fT VCE=-10V,IE=-50mA 28 MHz Cob VCB=-10V,IE=0,f=1.0MHz 42 pF Turn-on Time ton IC=-0.5A,RL=500Ù 0.1 0.5 Storage Time tstg IB1=-IB2=-0.1A,VCC=-250V 3.5 5.0 0.08 0.5 Gain Bandwidth Product Output Capacitance Fall time * PW tf V V ìs 350ìs,Duty Cycle 2% hFE Classification Marking M L K hFE 30 to 60 40 to 80 60 to 120 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2