TYSEMI 2SA1385-Z

Transistors
SMD Type
Product specification
2SA1385-Z
TO-252
+0.15
1.50 -0.15
+0.15
6.50-0.15
+0.2
5.30-0.2
Unit: mm
+0.1
2.30-0.1
+0.8
0.50-0.7
Features
+0.1
0.60-0.1
2.3
1 Base
+0.15
4.60-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-60
V
Collector-emitter voltage
VCEO
-60
V
Emitter-base voltage
VEBO
-7
V
Collector current
IC
-5
A
Collector current pulse *
ICP
-7
A
Total power dissipation
PT
10
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* PW
3 .8 0
+0.15
5.55 -0.15
0.127
max
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
+0.15
0.50 -0.15
+0.2
9.70 -0.2
Low VCE(sat):VCE(sat)=-0.18 V TYP.
10ms, duty cycle 50%.
Electrical Characteristics Ta = 25
Max
Unit
Collector cut-off current
Parameter
Symbol
ICBO
VCB = -50 V, IE = 0
-10
ìA
Emitter cut-off current
IEBO
VEB = -7 V, IC = 0
-10
ìA
hFE
VCE = -1 V, IC = -2 A
DC current gain *
Testconditons
Collector-emitter saturation voltage *
VCE(sat) IC = -2 A, IB = -0.2 A
Base-emitter saturation voltage *
VBE(sat) IC = -2 A, IB = -0.2 A
Gain bandwidth product
fT
Turn-on time
ton
Storage time
* PW
100
VCE = -10 V, IC = -0.5 A
tf
Typ
200
400
-0.18
-0.3
V
-1.2
V
140
IC = -2 A,IB1 =-IB2 = -0.2 A, RL=50Ù,
VCC=-10V
tstg
Fall time
Min
MHz
0.08
1.0
ìs
0.55
2.5
ìs
0.18
1.0
ìs
350ìs, duty cycle 2%.
hFE Classification
Marking
hFE
M
100
L
200
http://www.twtysemi.com
160
K
320
200
400
[email protected]
4008-318-123
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