Transistors SMD Type Product specification 2SA1385-Z TO-252 +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features +0.1 0.60-0.1 2.3 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -60 V Emitter-base voltage VEBO -7 V Collector current IC -5 A Collector current pulse * ICP -7 A Total power dissipation PT 10 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * PW 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Low VCE(sat):VCE(sat)=-0.18 V TYP. 10ms, duty cycle 50%. Electrical Characteristics Ta = 25 Max Unit Collector cut-off current Parameter Symbol ICBO VCB = -50 V, IE = 0 -10 ìA Emitter cut-off current IEBO VEB = -7 V, IC = 0 -10 ìA hFE VCE = -1 V, IC = -2 A DC current gain * Testconditons Collector-emitter saturation voltage * VCE(sat) IC = -2 A, IB = -0.2 A Base-emitter saturation voltage * VBE(sat) IC = -2 A, IB = -0.2 A Gain bandwidth product fT Turn-on time ton Storage time * PW 100 VCE = -10 V, IC = -0.5 A tf Typ 200 400 -0.18 -0.3 V -1.2 V 140 IC = -2 A,IB1 =-IB2 = -0.2 A, RL=50Ù, VCC=-10V tstg Fall time Min MHz 0.08 1.0 ìs 0.55 2.5 ìs 0.18 1.0 ìs 350ìs, duty cycle 2%. hFE Classification Marking hFE M 100 L 200 http://www.twtysemi.com 160 K 320 200 400 [email protected] 4008-318-123 1 of 1