SMD Type Type SMD Transistors IC Product specification 2SC5232 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 @IC = 10 mA/IB = 0.5 mA 1 0.55 Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 Large collector current: IC = 500 mA (max). +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Base current IB 50 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 Storage temperature Tstg -55 to +125 http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 SMD Type Type SMD Transistors IC Product specification 2SC5232 Electrical Characteristics Ta = 25 Max Unit Collector cut-off current Parameter Symbol ICBO VCB = 15 V, IE = 0 0.1 ìA Emitter cut-off current IEBO VEB = 5 V, IC = 0 0.1 ìA DC current gain hFE VCE = 2 V, IC = 10 mA Collector-emitter saturation voltage VCE (sat) Testconditons Min 300 Transition frequency fT 1000 IC = 10 mA, IB = 0.5 mA 15 30 IC = 200 mA, IB = 10 mA 110 250 0.87 1.2 VBE (sat) IC = 200 mA, IB = 10 mA Base-emitter saturation voltage Typ VCE = 2 V, IC = 10 mA 80 V V 130 MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 4.2 pF Collector-emitter on resistance Ron IB = 1 mA, Vin = 1 Vrms, f = 1 kHz 0.9 Ù Turn-on time ton 85 ns Storage time tstg 170 ns 40 ns Fall time tf Duty cycle 2%,IB1=-IB2=5 Ma hFE Classification F Marking Rank A B hFE 300 600 500 1000 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2