TYSEMI 2SJ486

SMD Type
Product specification
2SJ486
Features
• Low on-resistance
R DS(on) = 0.5 Ω typ. (at V GS = –4V, ID = –100 mA)
• 2.5V gate drive devices.
• Small package (MPAK).
Outline
MPAK
3
1
D
2
1. Source
2. Gate
3. Drain
G
S
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
SMD Type
Product specification
2SJ486
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
–30
V
Gate to source voltage
VGSS
±10
V
Drain current
ID
–0.3
A
1
Drain peak current
I D(pulse)*
–0.6
A
Channel dissipation
Pch
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 %
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
–30
—
—
V
I D = –10µA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±10
—
—
V
I G = ±100µA, VDS = 0
Zero gate voltege drain
current
I DSS
—
—
–1.0
µA
VDS = –30 V, VGS = 0
Gate to source leak current
I GSS
—
—
±5.0
µA
VGS = ±6.5V, VDS = 0
Gate to source cutoff voltage VGS(off)
–0.5
—
–1.5
V
I D = –10µA, VDS = –5V
Static drain to source on state RDS(on)
resistance
—
0.5
0.65
Ω
I D = –100mA
RDS(on)
—
VGS = –4V*1
0.7
1.2
Ω
I D = –40mA
VGS = –2.5V*1
Forward transfer admittance
|yfs|
0.4
0.65
—
S
I D = –100mA
VDS = –10V*1
Input capacitance
Ciss
—
45
—
pF
VDS = –10V
Output capacitance
Coss
—
76
—
pF
VGS = 0
Reverse transfer capacitance Crss
—
5.4
—
pF
f = 1MHz
Turn-on delay time
t d(on)
—
120
—
ns
VGS = –4V
Rise time
tr
—
340
—
ns
I D = –150mA
Turn-off delay time
t d(off)
—
850
—
ns
RL = 66.6Ω
Fall time
tf
—
550
—
ns
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2