SMD Type Product specification 2SJ486 Features • Low on-resistance R DS(on) = 0.5 Ω typ. (at V GS = –4V, ID = –100 mA) • 2.5V gate drive devices. • Small package (MPAK). Outline MPAK 3 1 D 2 1. Source 2. Gate 3. Drain G S http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 SMD Type Product specification 2SJ486 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS –30 V Gate to source voltage VGSS ±10 V Drain current ID –0.3 A 1 Drain peak current I D(pulse)* –0.6 A Channel dissipation Pch 150 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS –30 — — V I D = –10µA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±10 — — V I G = ±100µA, VDS = 0 Zero gate voltege drain current I DSS — — –1.0 µA VDS = –30 V, VGS = 0 Gate to source leak current I GSS — — ±5.0 µA VGS = ±6.5V, VDS = 0 Gate to source cutoff voltage VGS(off) –0.5 — –1.5 V I D = –10µA, VDS = –5V Static drain to source on state RDS(on) resistance — 0.5 0.65 Ω I D = –100mA RDS(on) — VGS = –4V*1 0.7 1.2 Ω I D = –40mA VGS = –2.5V*1 Forward transfer admittance |yfs| 0.4 0.65 — S I D = –100mA VDS = –10V*1 Input capacitance Ciss — 45 — pF VDS = –10V Output capacitance Coss — 76 — pF VGS = 0 Reverse transfer capacitance Crss — 5.4 — pF f = 1MHz Turn-on delay time t d(on) — 120 — ns VGS = –4V Rise time tr — 340 — ns I D = –150mA Turn-off delay time t d(off) — 850 — ns RL = 66.6Ω Fall time tf — 550 — ns http://www.twtysemi.com [email protected] 4008-318-123 2 of 2