IC IC SMD Type Product specification KTD2005 TSSOP-8 Unit: mm Features Low ON resistance. 2.5V drive. Mounting height 1.1mm. Composite type, facilitating high-density mounting. 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain-to-Source Voltage Parameter VDSS 20 V Gate-to-Source Voltage VGSS 10 V Drain Current(DC) ID 1 A Drain Current(pulse) *1 IDP 4 A Allowable Power Dissipation *2 PD 0.8 W Total Dissipation *2 PT 1.0 W Channel Temperature Tch 150 Storage Temperature Tstg -55 to +150 *1 PW 10 s, duty cycle 1% *2 Mounted on a ceramic board (1000mm2X0.8mm) http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 IC IC SMD Type Product specification KTD2005 Electrical Characteristics Ta = 25 Parameter Drain-to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Symbol Testconditons V(BR)DSS ID=1mA, VGS=0 IDSS VDS = 20 V, VGS = 0 V IGSS VGS = Typ VDS = 10 V, ID = 1 A Max 20 10 1.8 1.3 2.6 A V S 200 260 RDS(on)2 VGS = 4 V, ID = 1A 260 360 VDS =10 V,f = 1 MHz A 10 0.4 RDS(on)1 VGS = 10 V, ID = 1A Ciss Unit V 8 V, VDS = 0 V VGS(off) VDS = 10 V, ID = 1 mA Yfs Min m 90 pF Output Capacitance Coss 60 pF Reverse Transfer Capacitance Crss 28 pF Turn-on Delay Time td(on) 10 ns Rise Time Turn-off Delay Time Fall Time tr 22 ns td(off) 20 ns tf 19 ns 6 nC 1 nC 2 nC Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD See Specified Test Circuit VDS=10V,VGS=10V,ID=1A IS= 1A, VGS = 0 V 1.0 1.2 V Switching Time Test Circuit http://www.twtysemi.com [email protected] 4008-318-123 2 of 2