Transistors IC SMD Type Type SMD Product specification 2SK1151S TO-252 Features Low on-resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Suitable for switching regulator and DC-DC converter 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 +0.1 0.80-0.1 0.127 max +0.25 2.65-0.1 No secondary breakdown +0.28 1.50-0.1 +0.2 9.70-0.2 Low drive current +0.15 0.50-0.15 High speed switching 1 Gate 2 Drain +0.15 4.60-0.15 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 450 V Gate to source voltage VGSS 30 V Drain current (DC) ID 1.5 A Drain current(pulse) * ID 6 A Power dissipation PD 20 W Channel temperature Tch 150 Tstg -55 to +150 Storage temperature * PW 10 s, duty cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain to source breakdown voltage VDSS ID=10mA,VGS=0 Gate to source breakdown voltage VGSS ID= Drain cut-off current IDSS VDS=360V,VGS=0 Gate leakage current IGSS VGS= Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Yfs Ciss Coss Reverse transfer capacitance Crss Turn-on delay time Fall time http://www.twtysemi.com Typ VDS=20V,ID=1A Max V 30 2.0 0.6 Unit V 25V,VDS=0 RDS(on) VGS=10V,ID=1A Input capacitance Turn-off delay time A,VDS=0 VGS(off) VDS=10V,ID=1mA Output capacitance Rise time 100 Min 450 100 A 10 A 3.0 1.1 3.5 V s 5.5 160 pF 45 pF 5 pF td(on) 5 ns tr 10 ns td(off) 20 ns tf 10 ns VDS=10V,VGS=0,f=1MHZ ID=1A,VGS(on)=0,RL=30 [email protected] 4008-318-123 1 of 1