TYSEMI 2SK2859

IC
IC
MOSFET
SMD Type
Product specification
2SK2859
Features
Low On resistance.
Ultrahigh-speed switching.
4V drive.
1 : No Contact
2 : Source
3 : No Contact
4 : Gate
5-8 : Drain
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to source voltage
VDSS
100
V
Gate to source voltage
VGSS
Drain current
15
V
ID
2
A
Idp *
8
A
W
Power dissipation
PD
1.6
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain to source breakdown voltage
Symbol
Testconditons
VDSS
ID=1mA,VGS=0
Drain cut-off current
IDSS
VDS=100V,VGS=0
Gate leakage current
IGSS
VGS= 12V,VDS=0
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Min
RDS(on)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Max
10
1.0
VDS=10V,ID=2A
2.5
Unit
V
100
VGS(off) VDS=10V,ID=1mA
Yfs
Typ
100
2.0
4
A
A
V
S
VGS=10V,ID=2A
0.3
0.4
VGS=4V,ID=2A
0.4
0.55
380
pF
80
pF
Crss
15
pF
Turn-on delay time
ton
10
ns
Rise time
tr
13
ns
Turn-off delay time
toff
70
ns
Fall time
Diode forward voltage
http://www.twtysemi.com
VDS=20V,VGS=0,f=1MHZ
ID=2A,VGS(on)=10V,RL=25 ,VDD=50V
tf
VSD
30
IS=2A,VGS=0
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1
4008-318-123
ns
1.2
V
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