TYSEMI 2SK2869

IC
SMD Type
Product specification
2SK2869
TO-252
Features
Low on-resistance
typ.
+0.15
1.50-0.15
RDS = 0.033
+0.15
6.50-0.15
+0.2
5.30-0.2
Unit: mm
+0.1
2.30-0.1
+0.8
0.50-0.7
2.3
+0.1
0.60-0.1
3.80
+0.15
5.55-0.15
0.127
max
+0.25
2.65-0.1
+0.1
0.80-0.1
+0.28
1.50-0.1
+0.2
9.70-0.2
4V gate drive device can be driven from 5V source
+0.15
0.50-0.15
High speed switching
1 Gate
+0.15
4.60-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Drain to source voltage
VDSS
60
Gate to source voltage
VGSS
Drain current
20
ID
20
Unit
V
V
A
Idp *
80
A
Power dissipation
PD
30
W
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Drain to source breakdown voltage
VDSS
ID=10mA,VGS=0
Drain cut-off current
IDSS
VDS=60V,VGS=0
Gate leakage current
Min
IGSS
VGS= 16V,VDS=0
VGS(off)
VDS=10V,ID=1mA
1.5
Forward transfer admittance
Yfs
VDS=10V,ID=10A
10
Input capacitance
RDS(on)
Max
Unit
V
10
Gate to source cutoff voltage
Drain to source on-state resistance
Typ
60
10
2.5
16
0.033 0.045
VGS=4V,ID=10A
0.055
VDS=20V,VGS=0,f=1MHZ
A
V
S
VGS=10V,ID=10A
Ciss
A
0.07
740
pF
Output capacitance
Coss
380
pF
Reverse transfer capacitance
Crss
140
pF
Turn-on delay time
ton
10
ns
110
ns
105
ns
120
ns
Rise time
tr
Turn-off delay time
toff
Fall time
tf
http://www.twtysemi.com
ID=10A,VGS(on)=10V,RL=3
[email protected]
4008-318-123
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