TYSEMI 2SK2504

IC
MOSFET
SMD Type
Product specification
2SK2504
Features
TO-252
Low on-resistance.
Fast switching speed.
+0.15
1.50-0.15
+0.15
6.50-0.15
+0.2
5.30-0.2
Unit: mm
+0.1
2.30-0.1
+0.8
0.50-0.7
2.3
+0.1
0.60-0.1
+0.15
5.55-0.15
0.127
max
+0.25
2.65-0.1
+0.1
0.80-0.1
+0.28
1.50-0.1
Easy to parallel.
+0.15
0.50-0.15
+0.2
9.70-0.2
Easily designed drive circuits.
3.80
Wide SOA (safe operating area).
1 Gate
+0.15
4.60-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to source voltage
VDSS
100
V
Gate to source voltage
VGSS
Drain current
20
V
ID
5
A
Idp *
20
A
W
Power dissipation
PD
20
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain source breakdown voltage
VDSS
ID=1mA,VGS=0V
Drain cut-off current
IDSS
VDS=100V,VGS=0
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Testconditons
Min
Max
IGSS
VGS= 20V,VDS=0
VDS=10V,ID=1mA
1.0
Yfs
VDS=10V,ID=2.5A
4.0
100
2.5
VGS=10V,ID=2.5A
0.18
0.22
0.25
0.28
VDS=10V,VGS=0,f=1MHZ
A
nA
V
S
VGS=4V,ID=2.5A
Ciss
Unit
V
10
VGS(th)
RDS(on)
Typ
100
520
pF
Output capacitance
Coss
175
pF
Reverse transfer capacitance
Crss
60
pF
Turn-on delay time
ton
5
ns
20
ns
50
ns
20
ns
Rise time
tr
Turn-off delay time
toff
Fall time
tf
http://www.twtysemi.com
ID=2.5A,VGS(on)=10V,RG=10 ,RL=20
,VDD=50V
[email protected]
4008-318-123
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