IC MOSFET SMD Type Silicon N-Channel MOSFET 2SK2503 Features TO-252 Low on-resistance. Fast switching speed. Wide SOA (safe operating area). +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 +0.2 9.70-0.2 Easy to parallel. +0.15 0.50-0.15 Easily designed drive circuits. 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS 60 V Gate to source voltage VGSS 20 ID 5 A Idp * 20 A PD 20 W Drain current Power dissipation Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW V 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Drain source breakdown voltage VDSS ID=1mA,VGS=0V Drain cut-off current IDSS VDS=60V,VGS=0 Gate leakage current Gate threshold voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Testconditons Min IGSS VGS= 20V,VDS=0 VDS=10V,ID=1mA 1.0 Yfs VDS=10V,ID=2.5A 4.0 Coss Reverse transfer capacitance Crss 100 2.5 A nA V S 0.11 0135 VGS=4V,ID=2.5A 0.17 0.20 VDS=10V,VGS=0,f=1MHZ Unit V VGS=10V,ID=2.5A Ciss Output capacitance Max 10 VGS(th) RDS(on) Typ 60 520 pF 240 pF 100 pF Turn-on delay time ton 5 ns Rise time tr 20 ns Turn-off delay time toff 50 ns Fall time tf 20 ns ID=2.5A,VGS(on)=10V,RG=10 ,RL=12 ,VDD=30V www.kexin.com.cn 1