IC Transistors MOSFET SMD Type Product specification 2SK3274S TO-252 Features Low on-resistance Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 typ. +0.1 0.60-0.1 2.3 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 High speed switching +0.15 0.50-0.15 +0.2 9.70-0.2 4.5 V gate drive device 3.80 RDS(on) = 10 m +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS 20 30 A Idp * 120 A W Drain current Power dissipation PD 30 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW V ID 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Drain source surrender voltage VDSS ID=10mA,VGS=0 Drain cut-off current IDSS VDS=30V,VGS=0 Gate leakage current IGSS VGS= 20V,VDS=0 VGS(off) VDS=10V,ID=1mA 1.5 Yfs VDS=10V,ID=15A 18 Gat cutoff voltage Forward transfer admittance Drain to source on-state resistance RDS(on) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Testconditons Min Typ Max 30 Unit V 10 A 10 A 3.0 V 30 S VGS=10V,ID=15A 10 13 m VGS=4.5V,ID=15A 20 30 m VDS=10V,VGS=0,f=1MHZ 1500 pF 500 pF 250 pF Turn-on delay time ton 22 ns Rise time tr 170 ns Turn-off delay time toff 110 ns Fall time tf 145 ns http://www.twtysemi.com ID=15A,VGS(on)=10V,RL=2 [email protected] 4008-318-123 1 of 1