IC MOSFET SMD Type Silicon N Cannel MOSFET 2SK3147S TO-252 Features Low on-resistance typ. +0.15 1.50-0.15 RDS = 0.1 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 +0.2 9.70-0.2 4 V gate drive device can be driven from 5 V source +0.15 0.50-0.15 High speed switching 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 100 V Gate to source voltage VGSS 20 V ID 5 A Idp * 20 A W Drain current Power dissipation PD 20 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Symbol Testconditons IDSS VDS=100V,VGS=0 Min IGSS VGS= 16V,VDS=0 VGS(off) VDS=10V,ID=1mA 1..0 Forward transfer admittance Yfs VDS=10V,ID=3A 3.5 Input capacitance RDS(on) Max 10 Gate to source cut off voltage Drain to source on-state resistance Typ 10 2.5 6 0.1 0.13 VGS=4V,ID=3A 0.13 0.18 VDS=10V,VGS=0,f=1MHZ A A V S VGS=10V,ID=3A Ciss Unit 420 pF Output capacitance Coss 185 pF Reverse transfer capacitance Crss 100 pF Turn-on delay time ton 10 ns Rise time tr 35 ns Turn-off delay time toff 110 ns Fall time tf 60 ns ID=3A,VGS(on)=10V,RL=10 www.kexin.com.cn 1