IC MOSFET SMD Type N-Channel Silicon MOSFET 2SK2869 TO-252 Features Low on-resistance typ. +0.15 1.50-0.15 RDS = 0.033 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 +0.2 9.70-0.2 4V gate drive device can be driven from 5V source +0.15 0.50-0.15 High speed switching 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain to source voltage VDSS 60 Gate to source voltage VGSS Drain current 20 ID 20 Unit V V A Idp * 80 A Power dissipation PD 30 W Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain to source breakdown voltage VDSS ID=10mA,VGS=0 Drain cut-off current IDSS VDS=60V,VGS=0 Gate leakage current Min IGSS VGS= 16V,VDS=0 VGS(off) VDS=10V,ID=1mA 1.5 Forward transfer admittance Yfs VDS=10V,ID=10A 10 Input capacitance RDS(on) Max 10 2.5 16 0.033 0.045 VGS=4V,ID=10A 0.055 VDS=20V,VGS=0,f=1MHZ A A V S VGS=10V,ID=10A Ciss Unit V 10 Gate to source cutoff voltage Drain to source on-state resistance Typ 60 0.07 740 pF Output capacitance Coss 380 pF Reverse transfer capacitance Crss 140 pF Turn-on delay time ton 10 ns 110 ns 105 ns 120 ns Rise time tr Turn-off delay time toff Fall time tf ID=10A,VGS(on)=10V,RL=3 www.kexin.com.cn 1