TYSEMI 2SK3113

Transistors
IC
MOSFET
SMD Type
Product specification
2SK3113
Features
TO-252
Low on-state resistance
MAX. (VGS = 10 V, ID = 1.0 A)
+0.15
1.50-0.15
RDS(on) = 4.4
+0.15
6.50-0.15
+0.2
5.30-0.2
Unit: mm
+0.1
2.30-0.1
+0.8
0.50-0.7
Low gate charge
Avalanche capability ratings
2.3
+0.1
0.60-0.1
3.80
+0.15
5.55-0.15
0.127
max
+0.25
2.65-0.1
+0.1
0.80-0.1
+0.28
1.50-0.1
30 V
+0.15
0.50-0.15
Gate voltage rating
+0.2
9.70-0.2
QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A)
1 Gate
+0.15
4.60-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to source voltage
VDSS
600
V
Gate to source voltage
VGSS
30
V
ID
2.0
A
Idp *
8.0
A
Drain current
Power dissipation
TC=25
20
PD
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
W
1.0
TA=25
10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Drain cut-off current
IDSS
VDS=600V,VGS=0
Gate leakage current
IGSS
VGS= 30V,VDS=0
VGS(off)
VDS=10V,ID=1mA
2.5
Yfs
VDS=10V,ID=1.0A
0.5
RDS(on)
VGS=10V,ID=1.0A
Gate to source cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Typ
Max
Unit
100
A
10
3.5
S
3.3
Ciss
VDS=10V,VGS=0,f=1MHZ
A
V
4.4
260
pF
Output capacitance
Coss
60
pF
Reverse transfer capacitance
Crss
5
pF
Turn-on delay time
ton
7
ns
Rise time
tr
Turn-off delay time
toff
Fall time
tf
http://www.twtysemi.com
ID=1.0A,VGS(on)=10V,VDD=150V,RG=10
,RL=10
[email protected]
4008-318-123
2
ns
22
ns
9
ns
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