MOSFET SMD Type MOS Field Effect Transistor 2SK3570 TO-263 +0.1 1.27-0.1 Features 4.5V drive available. Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 23 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A) Built-in gate protection diode +0.2 2.54-0.2 Surface mount device available +0.2 15.25-0.2 Low gate charge +0.1 0.81-0.1 2.54 +0.2 2.54-0.2 MAX. (VGS = 10 V, ID = 24 A) +0.2 8.7-0.2 RDS(on)1 = 12 m 5.60 Low on-state resistance, 5.08 1 Gate +0.2 0.4-0.2 +0.1 -0.1 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain to source voltage VDSS 20 Gate to source voltage VGSS 20 V ID 48 A 160 A Drain current Idp * Power dissipation TC=25 29 PD V W 1.5 TA=25 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW Unit 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain cut-off current IDSS VDS=20V,VGS=0 Gate leakage current IGSS VGS= 20V,VDS=0 VGS(off) VDS=10V,ID=1mA 1.5 Yfs VDS=10V,ID=24A 8.0 RDS(on)1 VGS=10V,ID=24A 8.2 12 m RDS(on)2 VGS=4.5V,ID=15A 12.3 22 m Gate cut off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Turn-on delay time Rise time tr Turn-off delay time toff Fall time tf Total Gate Charge 10 A 10 2.5 A V S 930 pF 360 pF Crss 250 pF ton 13 ns 20 ns QG Gate to Source Charge QGS Gate to Drain Charge QGD VDS=10V,VGS=0,f=1MHZ ID=24A,VGS(on)=10V,RG=10 ,VDD=10V VDD = 16 V VGS = 10 V ID = 48 A 39 ns 14 ns 23 nC 4 nC 7 nC www.kexin.com.cn 1