Transistors IC SMD Type Product specification 2SK3643 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 Low Ciss: Ciss = 2400pF TYP. 2.3 +0.1 0.60-0.1 0.127 max 3.80 +0.15 5.55-0.15 MAX. (VGS = 4.5 V, ID = 32 A) +0.25 2.65-0.1 RDS(on)2 =9 m +0.28 1.50-0.1 MAX. (VGS = 10 V, ID = 32A) +0.15 0.50-0.15 RDS(on)1 =6 m +0.2 9.70-0.2 Low on-state resistance 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS 20 V ID 64 A 256 A Drain current Idp * Power dissipation TC=25 40 PD Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW W 1.0 TA=25 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Drain cut-off current IDSS VDS=30V,VGS=0 10 Gate leakage current IGSS VGS= 20V,VDS=0 100 VGS(off) VDS=10V,ID=1mA 1.5 19 Gate cut off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance 2.5 A nA V Yfs VDS=10V,ID=32A RDS(on)1 VGS=10V,ID=32A 4.7 6 m RDS(on)2 VGS=4.5V,ID=32A 6.3 9 m Ciss VDS=10V,VGS=0,f=1MHZ 39 Unit S 2400 pF Output capacitance Coss 920 pF Reverse transfer capacitance Crss 320 pF Turn-on delay time ton 14 ns 14 ns 75 ns 23 ns Rise time tr Turn-off delay time toff Fall time tf Total Gate Charge QG Gate to Source Charge QGS Gate to Drain Charge QGD http://www.twtysemi.com ID=32A,VGS(on)=10V,RG=10 ,VDD=15V VDD = 24V VGS = 10 V ID =64A [email protected] 48 nC 8.4 nC 12 nC 4008-318-123 1 of 1