TYSEMI 2SK3510

SMD Type
Product specification
2SK3510
TO-263
+0.1
1.27-0.1
Features
Super low on-state resistance:
+0.1
1.27-0.1
+0.2
4.57-0.2
+0.2
2.54-0.2
+0.2
15.25-0.2
0.1max
+0.1
1.27-0.1
+0.2
5.28-0.2
Built-in gate protection diode
+0.1
0.81-0.1
2.54
+0.2
2.54-0.2
Low Ciss: Ciss = 8500 pF TYP.
5.60
MAX. (VGS = 10 V, ID = 42 A)
+0.2
8.7-0.2
RDS(on) = 8.5 m
Unit: mm
5.08
1 Gate
+0.2
0.4-0.2
+0.1
-0.1
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Drain to source voltage
Parameter
VDSS
75
V
Gate to source voltage
VGSS
Drain current
Power dissipation
TC=25
20
V
ID
83
A
Idp *
332
A
125
PD
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
W
1.5
TA=25
10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Drain cut-off current
IDSS
VDS=70V,VGS=0
Gate leakage current
IGSS
VGS= 20V,VDS=0
VGS(off)
VDS=10V,ID=1mA
2.0
Yfs
VDS=10V,ID=42A
30
RDS(on)
VGS=10V,ID=42A
Gate cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Typ
3.0
VDS=10V,VGS=0,f=1MHZ
Unit
10
A
1
A
4.0
60
6.5
Ciss
Max
V
S
8.5
m
8500
pF
Output capacitance
Coss
1300
pF
Reverse transfer capacitance
Crss
650
pF
Turn-on delay time
ton
35
ns
Rise time
tr
Turn-off delay time
toff
Fall time
tf
Total Gate Charge
QG
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
http://www.twtysemi.com
ID=42A,VGS(on)=10V,RL=10 ,VDD=38V
ID =83A, VDD =60V, VGS = 10 V
[email protected]
28
ns
105
ns
16
ns
150
nC
30
nC
52
nC
4008-318-123
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