TYSEMI AP2304AGN

Product specification
AP2304AGN
▼ Simple Drive Requirement
D
▼ Small Package Outline
BVDSS
30V
RDS(ON)
117mΩ
ID
▼ Surface Mount Device
2.5A
S
SOT-23
G
Description
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
D
G
The SOT-23 package is universally used for all commercial-industrial
applications.
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
30
V
±20
V
3
2.5
A
3
2
A
10
A
Continuous Drain Current , VGS @ 10V
Continuous Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
1.38
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
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Max.
Value
Unit
90
℃/W
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Product specification
AP2304AGN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.1
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=2.5A
-
-
117
mΩ
VGS=4.5V, ID=2A
-
-
190
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VDS=10V, ID=2.5A
-
2
-
S
o
VDS=30V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=24V ,VGS=0V
-
-
10
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=2.5A
-
3
5
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
0.8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
1.8
-
nC
VDS=15V
-
5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
9
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
11
-
ns
tf
Fall Time
RD=15Ω
-
2
-
ns
Ciss
Input Capacitance
VGS=0V
-
120
190
pF
Coss
Output Capacitance
VDS=25V
-
62
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
24
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.67
-
Ω
Min.
Typ.
IS=1.2A, VGS=0V
-
-
1.2
V
IS=2A, VGS=0V,
-
24
-
ns
dI/dt=100A/µs
-
23
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
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[email protected]
4008-318-123
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