TYSEMI BAP64-02

Product specification
BAP64-02
SOD-523
+0.05
0.3-0.05
Unit: mm
+0.1
1.2-0.1
Features
+0.05
0.8-0.05
High voltage, current controlled
RF resistor for RF attenuators and switches
+
+0.1
0.6-0.1
-
Low diode capacitance
+0.1
1.6-0.1
0.77max
Low diode forward resistance
For applications up to 3 GHz.
+0.05
0.1-0.02
0.07max
Very low series inductance
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Min
Max
Unit
continuous reverse voltage
VR
175
V
continuous forward current
IF
100
mA
P tot
715
mW
total power dissipation
Ts = 90
storage temperature
T stg
-65
+150
junction temperature
Tj
-65
+150
thermal resistance from junction to soldering point
R th j-s
85
K/W
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
forward voltage
VF
IF = 50 mA
reverse leakage current
IR
diode capacitance
rD
Unit
0.95
1.1
V
10
VR =20 V
1
VR = 0; f = 1 MHz
0.48
0.35
VR = 20 V; f = 1 MHz
0.23
0.35
IF = 0.5 mA; f = 100 MHz; note 1
20
40
IF = 1 mA; f = 100 MHz; note 1
10
20
IF = 10 mA; f = 100 MHz; note 1
2
3.8
0.7
1.35
RL = 100
1.55
s
0.6
nH
,measured at IR = 3 mA
LS
A
pF
IF = 100 mA; f = 100 MHz; note 1
L
series inductance
Max
VR =175 V
when switched from IF = 10 mA to IR = 6 mA;
charge carrier life time
Typ
VR = 1 V; f = 1 MHz
Cd
diode forward resistance
Min
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
Marking
Marking
S
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