Product specification BAP70-03 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features High voltage, current controlled RF resistor forattenuators +0.1 2.6-0.1 1.0max Low diode capacitance Very low series inductance. 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25 Max Unit continuous reverse voltage Parameter VR 50 V continuous forward current IF 100 mA 500 mW total power dissipation Symbol Min P tot Ts = 90 storage temperature Tstg -65 +150 Tj -65 +150 junction temperature thermal resistance from junction to soldering point Rth j-s 120 K/W Electrical Characteristics Ta = 25 Parameter Symbol Conditions Typ Max forward voltage VF IF = 50 mA 0.95 1.1 V reverse leakage current IR V R = 30 V 20 nA diode capacitance Cd diode forward resistance rD V R = 0; f = 1 MHz 570 V R = 1 V; f = 1 MHz 400 V R = 5 V; f = 1 MHz 270 V R = 20V; f = 1 MHz 200 250 77 100 IF = 1 mA; f = 100 MHz 40 50 IF = 10 mA; f = 100 MHz 5.4 7 IF = 100 mA; f = 100 MHz 1.4 1.9 L R L = 100 series inductance LS fF IF = 0.5 mA; f = 100 MHz when switched from IF = 10 mA to IR = 6 mA; charge carrier life time Unit 1.25 ìs 1.5 nH ;measured at IR = 3 mA IF = 100 mA; f = 100 MHz Marking Marking A9 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1