TYSEMI BAP70-03

Product specification
BAP70-03
SOD-323
+0.05
0.85-0.05
+0.05
0.3-0.05
+0.1
1.7-0.1
Unit: mm
+0.1
1.3-0.1
Features
High voltage, current controlled RF resistor forattenuators
+0.1
2.6-0.1
1.0max
Low diode capacitance
Very low series inductance.
0.375
+0.05
0.1-0.02
0.475
Absolute Maximum Ratings Ta = 25
Max
Unit
continuous reverse voltage
Parameter
VR
50
V
continuous forward current
IF
100
mA
500
mW
total power dissipation
Symbol
Min
P tot
Ts = 90
storage temperature
Tstg
-65
+150
Tj
-65
+150
junction temperature
thermal resistance from junction to soldering point
Rth j-s
120
K/W
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Typ
Max
forward voltage
VF
IF = 50 mA
0.95
1.1
V
reverse leakage current
IR
V R = 30 V
20
nA
diode capacitance
Cd
diode forward resistance
rD
V R = 0; f = 1 MHz
570
V R = 1 V; f = 1 MHz
400
V R = 5 V; f = 1 MHz
270
V R = 20V; f = 1 MHz
200
250
77
100
IF = 1 mA; f = 100 MHz
40
50
IF = 10 mA; f = 100 MHz
5.4
7
IF = 100 mA; f = 100 MHz
1.4
1.9
L
R L = 100
series inductance
LS
fF
IF = 0.5 mA; f = 100 MHz
when switched from IF = 10 mA to IR = 6 mA;
charge carrier life time
Unit
1.25
ìs
1.5
nH
;measured at IR = 3 mA
IF = 100 mA; f = 100 MHz
Marking
Marking
A9
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